BF1203 NXP Semiconductors, BF1203 Datasheet - Page 7

• Manufacturer Part Number: BF1203
• Description: Two dual-gate MOS Field-Effect Transistors in a plastic SOT363 package
• Manufacturer: NXP Semiconductors

NXP Semiconductors
2001 Apr 25
handbook, halfpage
handbook, halfpage
Dual N-channel dual gate MOS-FET
Amplifier a
V
T
Fig.7
Amplifier a
V
R
Fig.9
j
DS
G2-S
G1
(mA)
= 25 C.
(mA)
I D
I D
= 5 V; V
connected to V
16
12
25
20
15
10
= 4 V; T
8
4
0
5
0
0
0
Drain current as a function of gate 1 current;
Drain current as a function of gate 1 (= V
typical values.
and drain supply voltage; typical values.
G2-S
j
= 25 C.
= 4 V.
10
2
GG
; see Fig.35.
R G1 = 39 kΩ
62 kΩ
56 kΩ
47 kΩ
20
4
30
6
V GG = V DS (V)
40
8
I G1 (μA)
68 kΩ
100 kΩ
MCD939
MCD941
82 kΩ
50
10
GG
)
7
handbook, halfpage
handbook, halfpage
Amplifier a
V
R
Fig.8
Amplifier a
V
R
Fig.10 Drain current as a function of gate 2
DS
DS
G1
G1
(mA)
(mA)
I D
I D
= 5 V; V
= 62 k (connected to V
= 5 V; T
= 62 k (connected to V
20
16
12
20
16
12
8
4
0
8
4
0
0
0
Drain current as a function of gate 1 supply
voltage (= V
voltage; typical values.
j
G2-S
= 25 C.
= 4 V; T
1
j
2
= 25 C.
GG
GG
GG
2
); typical values.
); see Fig.35.
); see Fig.35.
3
4
Product specification
V GG = 5 V
V G2-S (V)
4
V GG (V)
4.5 V
4 V
3.5 V
3 V
BF1203
MCD942
MCD940
6
5