BF1203 NXP Semiconductors, BF1203 Datasheet - Page 6

• Manufacturer Part Number: BF1203
• Description: Two dual-gate MOS Field-Effect Transistors in a plastic SOT363 package
• Manufacturer: NXP Semiconductors

NXP Semiconductors
2001 Apr 25
handbook, halfpage
handbook, halfpage
Dual N-channel dual gate MOS-FET
Amplifier a
V
T
Amplifier a
V
T
Fig.5
j
j
DS
DS
= 25 C.
= 25 C.
(mA)
(μA)
I G1
Fig.3 Transfer characteristics; typical values.
I D
100
= 5 V.
= 5 V.
25
20
15
10
80
60
40
20
5
0
0
0
0
Gate 1 current as a function of gate 1
voltage; typical values.
0.5
0.5
1
1
V G2-S = 4 V
V G2-S = 4 V
1.5
1.5
2
2
V G1-S (V)
V G1-S (V)
3 V
2 V
3.5 V
2.5 V
1.5 V
3.5 V
3 V
2.5 V
2 V
1.5 V
1 V
MCD935
MCD937
2.5
2.5
6
handbook, halfpage
handbook, halfpage
Amplifier a
V
T
Amplifier a
V
T
Fig.6
G2-S
j
DS
j
(mA)
= 25 C.
= 25 C.
(mS)
y fs
I D
= 5 V.
Fig.4 Output characteristics; typical values.
24
16
40
30
20
10
= 4 V.
8
0
0
0
0
Forward transfer admittance as a function
of drain current; typical values.
2
5
10
4
2 V
15
6
V G1-S = 1.8 V
Product specification
V G2-S = 4 V
2.5 V
20
8
V DS (V)
I D (mA)
3.5 V
3 V
BF1203
MCD936
MCD938
1.7 V
1.6 V
1.5 V
1.4 V
1.3 V
1.2 V
10
25