BF1203 NXP Semiconductors, BF1203 Datasheet - Page 14

• Manufacturer Part Number: BF1203
• Description: Two dual-gate MOS Field-Effect Transistors in a plastic SOT363 package
• Manufacturer: NXP Semiconductors

NXP Semiconductors
2001 Apr 25
handbook, halfpage
handbook, halfpage
Dual N-channel dual gate MOS-FET
Amplifier b
V
R
Fig.27 Gate 1 current as a function of gate 2
Amplifier b
V
f= 50 MHz; f
Fig.29 Unwanted voltage for 1% cross-modulation
(dBμV)
V unw
DS
DS
G1
(μA)
I G1
120
110
100
= 5 V; T
= 120 k (connected to V
= 5 V; V
90
80
40
30
20
10
0
0
0
voltage; typical values.
as a function of gain reduction; typical
values; see Fig.35.
unw
j
GG
= 25 C.
= 5 V; R
= 60 MHz; T
10
G1
2
= 120 k;
20
amb
GG
= 25 C.
); see Fig.35.
30
gain reduction (dB)
4
V GG = 5 V
V G2-S (V)
40
4.5 V
4 V
3.5 V
3 V
MCD962
MCD960
50
6
14
handbook, halfpage
handbook, halfpage
reduction
gain
(dB)
Amplifier b
V
f = 50 MHz; T
Fig.28 Typical gain reduction as a function of the
Amplifier b
V
f = 50 MHz; T
Fig.30 Drain current as a function of gain
DS
DS
(mA)
−10
−20
−30
−40
−50
I D
= 5 V; V
= 5 V; V
16
12
0
8
4
0
0
0
AGC voltage; see Fig.35.
reduction; typical values; see Fig.35.
GG
GG
amb
amb
= 5 V; R
= 5 V; R
= 25 C.
10
= 25 C.
1
G1
G1
= 120 k;
= 120 k;
20
2
30
gain reduction (dB)
Product specification
3
V AGC (V)
40
BF1203
MCD961
MCD963
50
4