BF1207 NXP Semiconductors, BF1207 Datasheet - Page 11

• Manufacturer Part Number: BF1207
• Description: Two dual-gate MOS Field-Effect Transistors with shared source and gate2 pins plus an integrated switch
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BF1207
Product data sheet
8.1.2 Scattering parameters for amplifier A
Table 9.
V
f
(MHz)
50
100
200
300
400
500
600
700
800
900
1000
DS(A)
= 5 V; V
s
Magnitude
(ratio)
0.987
0.983
0.976
0.966
0.952
0.935
0.917
0.898
0.876
0.852
0.826
11
Scattering parameters for amplifier A
G2-S
All information provided in this document is subject to legal disclaimers.
= 4 V; I
Angle
(deg)
4.169
8.109
15.97
23.844 2.89
31.575 2.84
35.225 2.78
46.678 2.72
54.094 2.65
61.205 2.57
68.299 2.49
75.321 2.41
Rev. 2 — 7 September 2011
D(A)
= 18 mA; V
s
Magnitude
(ratio)
2.87
2.95
2.93
21
DS(B)
Angle
(deg)
175.5
171.14 0.0015
162.44 0.0028
153.77 0.0041
145.23 0.0053
136.82 0.0063
128.50 0.0072
120.44 0.0079
112.33 0.0084
104.32 0.0089
96.42
= 0 V; V
G1-S(B)
s
Magnitude
(ratio)
0.0008
0.0091
12
Dual N-channel dual gate MOSFET
= 0 V; T
Angle
(deg)
83.82
82.08
77.50
73.45
69.42
65.72
61.48
58.05
52.74
48.61
43.86
amb
= 25
s
Magnitude
(ratio)
0.992
0.992
0.990
0.989
0.986
0.984
0.981
0.977
0.974
0.970
0.967
© NXP B.V. 2011. All rights reserved.
22

C; typical values.
BF1207
Angle
(deg)
1.42
2.86
5.66
8.49
11.28
14.03
16.80
19.55
22.32
25.10
27.88
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