BF1207 NXP Semiconductors, BF1207 Datasheet - Page 17

• Manufacturer Part Number: BF1207
• Description: Two dual-gate MOS Field-Effect Transistors with shared source and gate2 pins plus an integrated switch
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BF1207
Product data sheet
8.2.2 Scattering parameters for amplifier B
Table 11.
V
f
(MHz)
50
100
200
300
400
500
600
700
800
900
1000
DS(B)
= 5 V; V
s
Magnitude
(ratio)
0.993
0.992
0.987
0.979
0.969
0.957
0.943
0.927
0.907
0.885
0.858
11
Scattering parameters for amplifier B
G2-S
All information provided in this document is subject to legal disclaimers.
= 4 V; I
Angle
(deg)
3.018 3.07
6.186 3.07
12.43 3.09
18.60 3.02
24.62 2.99
30.72 2.95
36.71 2.90
42.77 2.86
48.91 2.79
54.77 2.736
61.01 2.675
Rev. 2 — 7 September 2011
D(B)
= 14 mA; V
s
Magnitude
(ratio)
21
DS(A)
176.04 0.0004
172.05 0.0011
164.13 0.0024
156.28 0.0036
148.48 0.0046
140.69 0.0056
132.87 0.0065
125.21 0.0074
117.22 0.0082
109.29 0.0086
101.18 0.0092
Angle
(deg)
= 0 V; V
s
Magnitude
(ratio)
G1-S(A)
12
Dual N-channel dual gate MOSFET
= 0 V; T
95.97
90.33
85.03
82.94
81.97
81.03
79.77
79.04
79.42
75.47
73.48
Angle
(deg)
amb
= 25
s
Magnitude
(ratio)
0.991
0.990
0.988
0.986
0.983
0.980
0.977
0.973
0.969
0.964
0.958
22
© NXP B.V. 2011. All rights reserved.

C; typical values.
BF1207
Angle
(deg)
1.39
2.79
5.49
8.21
10.91
13.63
16.40
19.13
21.93
24.85
27.75
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