BF1207 NXP Semiconductors, BF1207 Datasheet - Page 8

• Manufacturer Part Number: BF1207
• Description: Two dual-gate MOS Field-Effect Transistors with shared source and gate2 pins plus an integrated switch
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BF1207
Product data sheet
Fig 6.
Fig 8.
(mS)
y
(1) V
(2) V
(3) V
(4) V
(5) V
(6) V
(7) V
fs
40
30
20
10
0
0
V
Amplifier A: forward transfer admittance as a
function of drain current; typical values
V
Amplifier A: drain current of amplifier A as a function of supply voltage of A and B amplifier; typical
values
G2-S
G2-S
G2-S
G2-S
G2-S
G2-S
G2-S
DS(A)
G2-S
(7)
= 4 V.
= 3.5 V.
= 3 V.
= 2.5 V.
= 2 V.
= 1.5 V.
= 1 V.
= 4 V, T
= 5 V; T
8
(6)
j
j
= 25 C, R
= 25 C.
16
(5)
G1(B)
(mA)
I
D
= 68 k (connected to ground); see
(4)
20
16
12
24
8
4
0
0
All information provided in this document is subject to legal disclaimers.
I
001aac884
D
(mA)
(3)
(1)
(2)
Rev. 2 — 7 September 2011
1
32
2
Fig 7.
3
(mA)
I
(1) R
(2) R
(3) R
(4) R
(5) R
(6) R
(7) R
D
Figure
25
20
15
10
5
0
0
V
Amplifier A: drain current as a function of V
and V
4
G2-S
V
G1(A)
G1(A)
G1(A)
G1(A)
G1(A)
G1(A)
G1(A)
001aac886
supply
3.
= 4 V; T
= 39 k.
= 47 k
= 68 k.
= 82 k.
= 100 k
= 120 k.
= 150 k.
GG
(V)
; typical values
5
Dual N-channel dual gate MOSFET
j
2
= 25 C.
4
V
GG =
© NXP B.V. 2011. All rights reserved.
001aac885
V
BF1207
(1)
(2)
(3)
(4)
(5)
(6)
(7)
DS
(V)
6
8 of 23
DS