BF1207 NXP Semiconductors, BF1207 Datasheet - Page 5

• Manufacturer Part Number: BF1207
• Description: Two dual-gate MOS Field-Effect Transistors with shared source and gate2 pins plus an integrated switch
• Manufacturer: NXP Semiconductors

NXP Semiconductors
Table 7.
T
[1]
[2]
BF1207
Product data sheet
Symbol
I
I
G1-S
G2-S
j
Fig 2.
= 25
R
R
(mA)
G1
G1
I
(1) I
(2) I
(3) I
(4) I
(5) I
(6) I
D

20
16
12
C.
connects gate1 (A) to V
connects gate1 (B) to V
8
4
0
0
V
Drain currents of MOSFET A and B as function
of V
D(A)
D(A)
D(A)
D(B)
D(B)
D(B)
DS(A)
Static characteristics
; R
; R
; R
; R
; R
; R
Parameter
gate1 cut-off current
gate2 cut-off current
GG
(6)
= V
G1
G1
G1
G1
G1
G1
1
= 47 k.
= 68 k.
= 100 k.
= 100 k.
= 68 k.
= 47 k.
DS(B)
(4)
(5)
= 5 V; V
2
GG
GG
G2-S
= 5 V (see
= 0 V (see
3
…continued
= 4 V; T
Figure
Figure
j
All information provided in this document is subject to legal disclaimers.
4
= 25 C.
001aac742
V
(2)
(3)
(1)
GG
(V)
3).
3).
Rev. 2 — 7 September 2011
Conditions
V
V
5
G2-S
G2-S
amplifier A; V
amplifier B; V
= V
= 4 V; V
DS(A)
Fig 3.
G1-S
= 0 V
G1-S(A)
G1-S(A)
= V
DS(A)
V
V
Functional diagram
= 5 V; V
= 0 V; I
GG
GG
= 5 V: amplifier A is on; amplifier B is off.
= 0 V: amplifier A is off; amplifier B is on.
= V
G1B
G1A
G2
D(B)
R
DS(B)
DS(B)
G1
Dual N-channel dual gate MOSFET
= 0 A
= 0 V
= 0 V;
V
GG
Min
-
-
-
001aac881
© NXP B.V. 2011. All rights reserved.
DB
S
DA
Typ
-
-
-
BF1207
Max Unit
50
50
20
5 of 23
nA
nA
nA