BF1207 NXP Semiconductors, BF1207 Datasheet - Page 14

• Manufacturer Part Number: BF1207
• Description: Two dual-gate MOS Field-Effect Transistors with shared source and gate2 pins plus an integrated switch
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BF1207
Product data sheet
Fig 18. Amplifier B: forward transfer admittance as a
Fig 20. Amplifier B: drain current as a function of
(mS)
(mA)
I
D(A)
y
(1) V
(2) V
(3) V
(4) V
(5) V
(6) V
(7) V
fs
40
30
20
10
20
16
12
0
8
4
0
0
V
function of drain current; typical values
0
V
drain source voltage; typical values
G2-S
G2-S
G2-S
G2-S
G2-S
G2-S
G2-S
DS(B)
DS(B)
(7)
= 4 V.
= 3.5 V.
= 3 V.
= 2.5 V.
= 2 V.
= 1.5 V.
= 1 V.
= 5 V; V
= 5 V; V
(6)
8
G1-S(A)
G1-S(A)
2
(5)
= 0 V; T
= 0 V; T
16
(4)
j
j
4
= 25 C.
= 25 C.
24
V
All information provided in this document is subject to legal disclaimers.
DS
I
(3)
001aac896
D
001aac898
(V)
(mA)
(2)
(1)
Rev. 2 — 7 September 2011
32
6
Fig 19. Amplifier B: drain current as function of gate2
Fig 21. Amplifier B: drain current as a function of
(mA)
(mA)
I
I
(1) V
(2) V
(3) V
(4) V
(5) V
D
D
20
16
12
16
12
8
4
0
8
4
0
−40
0
V
voltage; typical values
V
gate1 current; typical values
DS
DS
DS
DS
DS
G1-S(A)
DS(B)
= 5 V.
= 4.5 V.
= 4 V.
= 3.5 V.
= 3 V.
= 5 V; V
= 0 V; T
1
−30
Dual N-channel dual gate MOSFET
G2-S
j
= 25 C.
2
= 4 V; V
−20
3
G1-S(A)
−10
= 0 V; T
© NXP B.V. 2011. All rights reserved.
4
V
001aac897
001aac899
(1)
(2)
(3)
(4)
(5)
I
BF1207
G2-S
G1
(μA)
j
(V)
= 25 C.
5
0
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