ST7LITE25F2 STMicroelectronics, ST7LITE25F2 Datasheet - Page 92

• Manufacturer Part Number: ST7LITE25F2
• Description: 8-BIT MCU WITH SINGLE VOLTAGE FLASH MEMORY, DATA EEPROM, ADC, TIMERS, SPI
• Manufacturer: STMicroelectronics

Specifications of ST7LITE25F2

• 8 Kbytes Single Voltage Flash Program Memory With Read-out Protection, In-circuit Programming And In-application Programming (icp And Iap). 10k Write/erase Cycles Guaranteed, Data Retention: 20 years at 55˚C.
• Clock Sources: Internal 1% RC oscillator, crystal/ceramic resonator or external clock
• Five Power Saving Modes: Halt, Active-Halt, Wait and Slow, Auto Wake Up From Halt

ST7LITE2
13.2 ABSOLUTE MAXIMUM RATINGS
Stresses above those listed as “absolute maxi-
mum ratings” may cause permanent damage to
the device. This is a stress rating only and func-
tional operation of the device under these condi-
13.2.1 Voltage Characteristics
13.2.2 Current Characteristics
13.2.3 Thermal Characteristics
Notes:
1. Directly connecting the I/O pins to V
tion occurs (for example, due to a corrupted program counter). To guarantee safe operation, this connection has to be
done through a pull-up or pull-down resistor (typical: 10kΩ for I/Os). Unused I/O pins must be tied in the same way to V
or V
2. I
respected, the injection current must be limited externally to the I
while a negative injection is induced by V
corresponding V
3. All power (V
4. Negative injection disturbs the analog performance of the device. In particular, it induces leakage currents throughout
the device including the analog inputs. To avoid undesirable effects on the analog functions, care must be taken:
- Analog input pins must have a negative injection less than 0.8 mA (assuming that the impedance of the analog voltage
is lower than the specified limits)
- Pure digital pins must have a negative injection less than 1.6mA. In addition, it is recommended to inject the current as
far as possible from the analog input pins.
5. No negative current injection allowed on PB0 and PB1 pins.
6. When several inputs are submitted to a current injection, the maximum ΣI
and negative injected currents (instantaneous values). These results are based on characterisation with ΣI
mum current injection on four I/O port pins of the device.
92/133
1
INJ(PIN)
SS
I
INJ(PIN)
ΣI
V
according to their reset configuration.
V
Symbol
Symbol
Symbol
ESD(HBM)
DD
INJ(PIN)
T
I
I
V
VDD
VSS
must never be exceeded. This is implicitly insured if V
I
STG
T
IO
- V
IN
J
2) & 4)
DD
SS
2)
IN
) and ground (V
maximum must always be respected
Supply voltage
Input voltage on any pin
Electrostatic discharge voltage (Human Body Model)
Total current into V
Total current out of V
Output current sunk by any standard I/O and control pin
Output current sunk by any high sink I/O pin
Output current source by any I/Os and control pin
Injected current on RESET pin
Injected current on OSC1 and OSC2 pins
Injected current on PB0 and PB1 pins
Injected current on any other pin
Total injected current (sum of all I/O and control pins)
Storage temperature range
Maximum junction temperature (see Table 21, “THERMAL CHARACTERISTICS,” on
page 120)
SS
) lines must always be connected to the external supply.
DD
IN
or V
<V
DD
SS
SS
SS
. For true open-drain pads, there is no positive injection current, and the
power lines (source)
could damage the device if an unexpected change of the I/O configura-
Ratings
Ratings
Ratings
ground lines (sink)
1) & 2)
6)
tions is not implied. Exposure to maximum rating
conditions for extended periods may affect device
reliability.
INJ(PIN)
5)
IN
maximum is respected. If V
3)
3)
value. A positive injection is induced by V
INJ(PIN)
6)
see
page 105
is the absolute sum of the positive
V
Maximum value
Maximum value
SS
section 13.7.3 on
-0.3 to V
-65 to +150
Value
± 20
- 25
100
100
7.0
± 5
± 5
± 5
25
50
+5
IN
DD
maximum cannot be
+0.3
INJ(PIN)
Unit
Unit
Unit
mA
°C
IN
V
V
maxi-
>V
DD
DD