FPAM50LH60 Fairchild Semiconductor, FPAM50LH60 Datasheet - Page 5

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FPAM50LH60

Manufacturer Part Number
FPAM50LH60
Description
FPAM50LH60 is an advanced smart power module of 2-phase interleaved PFC (Power Factor Correction)
Manufacturer
Fairchild Semiconductor
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FPAM50LH60
Manufacturer:
FAIRCHILD
Quantity:
10 000
Company:
Part Number:
FPAM50LH60
Quantity:
5 000
FPAM50LH60 Rev. C
Electrical Characteristics
Converter Part
Note:
3. t
Control Part
Note:
4. T
For the detailed information, please see Figure 4.
Symbol
ON
V
V
UV
UV
V
TH
Symbol
V
IN(OFF)
I
V
SC(Ref)
V
I
t
IN(ON)
R
QCC
PCC
FOD
and t
t
FOH
is the temperature of thermister itself. To know case temperature ( T
FOL
t
CE(SAT)
C(OFF)
CCD
CCR
TH
C(ON)
t
I
V
V
I
t
t
CES
OFF
ON
RR
RR
FR
FF
OFF
include the propagation delay time of the internal drive IC. t
Quiescent V
Current
Operating V
Current
Fault Output Voltage
Over-Current Protection Trip
Level Voltage of CSC pin
Supply Circuit Under-
Voltage Protection
Fault-out Pulse Width
ON Threshold Voltage
OFF Threshold Voltage
Resistance of Thermistor
IGBT Saturation Voltage
FRD Forward Voltage
Rectifier Forward Voltage
Switching Characteristic
Collector-Emitter
Leakage Current
Parameter
Parameter
CC
CC
Supply
Supply
(T
J
V
between V
V
one PWM signal input per single IGBT, Supply
current between V
V
V
V
Detection Level
Reset Level
Applied between IN
Applied between IN
@ T
@ T
= 25°C, Unless Otherwise Specified)
CC
CC
SC
SC
CC
V
I
I
V
V
single IGBT
V
F
FR
CC
PN
IN
CES
TH
TH
= 0V, V
= 1V, V
= 15V
= 50A
= 15V, IN
= 15V, f
= 50A
= 0V « 5V, Inductive Load (Note 3), per
= 15V, V
= 400V, V
= 25°C (Figure 5)(Note 4)
= 100°C (Figure 5)(Note 4)
=600V
CC
C(ON)
FO
FO
C
PWM
), please make the experiment considering your application.
X
and COM
Circuit: 10kW to 5V Pull-up
Circuit: 10kW to 5V Pull-up
, IN
IN
and t
CC
Conditions
Conditions
= 20kHz, duty=50%, applied to
= 5V, I
CC
Y
X
X
C(OFF)
= 15V, I
, IN
, IN
- COM = 0V, Supply current
5
and COM
Y
Y
C
are the switching time of IGBT itself under the given gate driving condition internally.
- COM
- COM
= 50A
C
= 25A,
Min.
Min.
-
-
-
-
-
-
-
-
-
-
0.45
10.5
11.0
4.5
2.6
30
-
-
-
-
-
-
Typ.
1117
1.13
772
125
110
1.7
1.9
27
45
Typ.
-
0.5
2.9
47
-
-
-
-
-
-
-
-
-
Max.
1.35
250
Max. Units
2.2
2.4
2.65
0.55
13.0
13.5
-
-
-
-
-
-
7.0
0.5
0.8
www.fairchildsemi.com
-
-
-
-
-
Units
mA
ns
ns
ns
ns
ns
mA
mA
kW
kW
V
V
V
A
ms
V
V
V
V
V
V
V

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