FFP30S60S Fairchild Semiconductor, FFP30S60S Datasheet
FFP30S60S
Available stocks
Related parts for FFP30S60S
FFP30S60S Summary of contents
Page 1
... Device Marking Device F30S60S FFP30S60STU ©2012 Fairchild Semiconductor Corporation FFP30S60S Rev.C0 30A, 600V STEALTH The FFP30S60S is STEALTH = 30A F charac-teristics silicon nitride passivated ion-implanted epi- taxial planar construction. This device is intended for use as freewheeling of boost diode in switching power supplies and other power swithching applica- tions ...
Page 2
... S factor 30A, di/dt = 200A/µ factor Avalanche Energy ( L = 40mH) AVL Notes: 1: Pulse: Test Pulse width = 300µs, Duty Cycle = 2% Test Circuit and Waveforms FFP30S60S Rev. unless otherwise noted C Parameter 125 ...
Page 3
... T = 125 100 150 200 [ µ di/ FFP30S60S Rev.C0 Figure 2. Typical Reverse Current 1000 100 0.1 0. [V] F Figure 4. Typical Reverse Recovery Time 100 Typical Capacitance 271 100 100 ...
Page 4
... Typical Performance Characteristics Figure 7. Normalized Maximum Transient Thermal Impedance DUTY CYCLE - DESCENDING ORDER 0.5 1.0 0.2 0.1 0.05 0.02 0.01 0.1 SINGLE PULSE 0.01 10-5 10-4 FFP30S60S Rev.C0 10-3 10-2 10-1 t, RECTANGULAR PULSE DURATION ( NOTES: DUTY FACTOR PEAK 100 101 www.fairchildsemi.com ...
Page 5
... Mechanical Dimensions FFP30S60S Rev.C0 TO-220-2L 5 Dimensions in Millimeters www.fairchildsemi.com ...
Page 6
... PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FFP30S60S Rev.C0 PowerTrench ® PowerXS™ SM Programmable Active Droop™ ® QFET QS™ Quiet Series™ RapidConfigure™ ™ ...