ISL9R8120S3S Fairchild Semiconductor, ISL9R8120S3S Datasheet - Page 2

• Manufacturer Part Number: ISL9R8120S3S
• Description: The ISL9R8120P2 and ISL9R8120S3S are StealthTM diodes optimized for low loss performance in high frequency hard switched applications
• Manufacturer: Fairchild Semiconductor

©2002 Fairchild Semiconductor Corporation
Package Marking and Ordering Information
Electrical Characteristics
Off State Characteristics
On State Characteristics
Dynamic Characteristics
Switching Characteristics
Thermal Characteristics
I
I
I
Symbol
RM(REC)
RM(REC)
RM(REC)
dI
R
R
Q
Q
Q
Device Marking
V
C
I
M
t
t
t
t
S
S
RR
RR
RR
R
rr
rr
rr
rr
F
JC
R8120S3S
J
JA
/dt
R8120P2
Instantaneous Reverse Current
Instantaneous Forward Voltage
Junction Capacitance
Reverse Recovery Time
Reverse Recovery Time
Maximum Reverse Recovery Current
Reverse Recovered Charge
Reverse Recovery Time
Softness Factor (t
Maximum Reverse Recovery Current
Reverse Recovered Charge
Reverse Recovery Time
Softness Factor (t
Maximum Reverse Recovery Current
Reverse Recovered Charge
Maximum di/dt during t
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient TO-220, TO-263
Parameter
ISL9R8120S3S
ISL9R8120P2
b
b
/t
/t
a
a
Device
)
)
b
T
C
= 25°C unless otherwise noted
TO-220AC
TO-263AB
Package
V
I
V
I
I
I
dI
V
I
dI
V
T
I
dI
V
T
TO-220, TO-263
F
F
F
F
F
F
C
C
R
R
R
R
R
F
F
F
= 8A
= 1A, dI
= 8A, dI
= 8A,
= 8A,
= 8A,
/dt = 200A/µs,
/dt = 200A/µs,
/dt = 1000A/µs,
= 1200V
= 10V, I
= 780V, T
= 780V,
= 125°C
= 780V,
= 125°C
F
F
Test Conditions
F
/dt = 100A/µs, V
/dt = 100A/µs, V
= 0A
C
= 25°C
T
T
T
T
C
C
C
C
= 25°C
= 125°C
= 25°C
= 125°C
Tape Width
R
R
24mm
= 30V
= 30V
N/A
Min
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
ISL9R8120P2 / ISL9R8120S3S Rev. A
300
525
375
200
310
Typ
2.8
2.7
4.3
5.5
1.1
5.5
1.2
30
25
35
11
9
-
-
-
-
Max
1.75
100
Quantity
1.0
3.3
3.1
32
44
62
-
-
-
-
-
-
-
-
-
-
-
-
-
800
50
°C/W
°C/W
Units
A/µs
mA
µA
nC
µC
µC
pF
ns
ns
ns
ns
ns
V
V
A
A
A
-
-