FGA30S120P Fairchild Semiconductor, FGA30S120P Datasheet - Page 4

• Manufacturer Part Number: FGA30S120P
• Manufacturer: Fairchild Semiconductor

FGA30S120P Rev. C0
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. Vge
Figure 9. Gate Charge Characteristics
Figure 11. Turn-On Characteristics vs
100
500
15
12
20
16
12
20
9
6
3
0
8
4
0
0
4
Common Emitter
T
C
10
I
C
= 25
= 15A
Gate Resistance
o
Gate-Emitter Voltage, V
C
20
8
t
t
Gate Charge, Q
r
d(on)
Gate Resistance, R
30A
30
30
V
CC
60A
= 200V
12
40
Common Emitter
V
I
T
T
C
C
C
CC
g
= 30A
= 25
= 175
[nC]
= 600V, V
50
Common Emitter
T
GE
G
C
o
400V
C
o
= 175
[
[V]
C
W
60
16
]
60
GE
o
C
= 15V
600V
70
20
4
Figure 8. Capacitance Characteristics
Figure 10. SOA Characteeristics
Figure 12. Turn-off Characteristics vs.
10000
1000
10000
1000
100
0.01
100
10
100
0.1
10
1
1
1
0
Common Emitter
V
T
Common Emitter
V
I
T
T
*Notes:
C
C
C
CC
GE
C
1. T
2. T
3. Single Pulse
= 30A
Collector-Emitter Voltage, V
= 25
= 175
Gate Resistance
= 25
= 600V, V
10
= 0V, f = 1MHz
Collector-Emitter Voltage, V
C
J
o
= 175
= 25
o
C
o
C
C
Gate Resistance, R
20
o
C
o
10
GE
C
= 15V
30
DC
40
10 ms
100
1ms
G
10
50
[
C
t
W
C
C
100
d(off)
CE
ies
CE
oes
res
]
t
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[V]
m
[V]
f
50
s
60
m
s
20
1000
70
30