FGA60N65SMD Fairchild Semiconductor, FGA60N65SMD Datasheet - Page 5

• Manufacturer Part Number: FGA60N65SMD
• Manufacturer: Fairchild Semiconductor

FGA60N65SMD Rev. C0
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. V
Figure 9. Capacitance Characteristics
Figure 11. SOA Characteristics
20
16
12
7000
6000
5000
4000
3000
2000
1000
8
4
0
0.01
300
100
0.1
4
10
1
0
0.1
I
1
C
= 30A
*Notes:
60A
1. T
2. T
3. Single Pulse
Collector-Emitter Voltage, V
C
J
Gate-Emitter Voltage, V
Collector-Emitter Voltage, V
= 175
= 25
8
o
C
o
C
10
120A
1
12
DC
10 ms
Common Emitter
V
T
C
GE
Common Emitter
T
100
C
C
C
C
= 25
oes
res
= 0V, f = 1MHz
GE
ies
1ms
= 25
CE
16
o
CE
[V]
C
100
[V]
GE
o
C
10
[V]
m
s
10
m
s
1000
30
20
5
Figure 8. Saturation Voltage vs. V
100
20
16
12
80
60
40
20
10
Figure 10. Gate charge Characteristics
15
12
8
4
0
9
6
3
0
Figure 12. Turn-on Characteristics vs.
4
0
0
Common Emitter
T
I
C
C
60A
= 30A
= 25
o
40
10
C
Gate-Emitter Voltage, V
8
t
t
r
Gate Resistance, R
d(on)
Gate Resistance
Gate Charge, Q
120A
80
20
V
12
CC
Common Emitter
V
I
T
T
C
= 200V
CC
C
C
= 60A
120
= 25
= 175
30
= 400V, V
g
Common Emitter
T
[nC]
400V
C
o
G
C
= 175
GE
o
[
C
W
16
[V]
]
300V
160
o
GE
40
C
= 15V
GE
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20
200
50