FGA180N33ATD Fairchild Semiconductor, FGA180N33ATD Datasheet - Page 4

• Manufacturer Part Number: FGA180N33ATD
• Description: Using Novel Trench IGBT Technology, Fairchild's new series of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential
• Manufacturer: Fairchild Semiconductor

FGA180N33ATD Rev. A
Typical Performance Characteristics
Figure 1. Typical Output Characteristics
Figure 3. Typical Saturation Voltage
Figure 5. Saturation Voltage vs. Case
200
150
100
50
2.1
1.8
1.5
1.2
0.9
0.6
200
150
100
0
50
0
25
0
0
Common Emitter
V
T
T
Common Emitter
V
T
GE
C
C
Collector-EmitterCase Temperature, T
GE
C
= 25
= 125
Temperature at Variant Current Level
15V
12V
Characteristics
= 25
= 15V
= 15V
Collector-Emitter Voltage, V
o
C
o
o
50
Collector-Emitter Voltage, V
C
C
20V
1
2
9V
75
10V
100
I
180A
C
2
40A
90A
= 20A
4
CE
8V
CE
125
V
[V]
7V
GE
[V]
C
= 6V
[
o
C
]
150
3
6
4
Figure 2. Typical Output Characteristics
Figure 6. Saturation Voltage vs. V
Figure 4. Transfer Characteristics
200
150
100
200
150
100
50
20
16
12
50
0
8
4
0
0
0
2
0
Common Emitter
V
T
T
T
C
C
CE
C
= 25
= 125
= 125
I
= 20V
C
15V
12V
= 20A
40A
o
Collector-Emitter Voltage, V
C
o
4
o
C
Gate-Emitter Voltage, V
C
20V
Gate-Emitter Voltage,V
4
2
8
9V
180A
90A
6
10V
12
Common Emitter
T
C
4
= 25
GE
GE
8
[V]
[V]
CE
o
V
C
16
GE
[V]
7V
GE
8V
= 6V
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20
10
6