FGH30N120FTD Fairchild Semiconductor, FGH30N120FTD Datasheet - Page 3
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FGH30N120FTD
Manufacturer Part Number
FGH30N120FTD
Description
Manufacturer
Fairchild Semiconductor
Datasheet
1.FGH30N120FTD.pdf
(9 pages)
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FGH30N120FTD Rev. A
Electrical Characteristics of the Diode
V
t
I
Q
Symbol
rr
rr
FM
rr
Diode Forward Voltage
Diode Reverse Recovery Time
Diode Peak Reverse Recovery Current
Diode Reverse Recovery Charge
Parameter
I
I
di/dt = 200A/µs
F
F
= 30A
=30A,
Test Conditions
T
C
= 25°C unless otherwise noted
3
T
T
T
T
T
T
T
T
C
C
C
C
C
C
C
C
= 25
= 125
= 25
= 125
= 25
= 125
= 25
= 125
o
o
o
o
C
C
C
C
o
o
o
o
C
C
C
C
Min.
-
-
-
-
-
-
-
-
Typ.
18.2
730
775
1.3
1.3
5.9
43
47
Max
1.7
www.fairchildsemi.com
-
-
-
-
-
-
-
Units
µC
ns
V
A
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