FGH75N60UF Fairchild Semiconductor, FGH75N60UF Datasheet - Page 4
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FGH75N60UF
Manufacturer Part Number
FGH75N60UF
Description
Manufacturer
Fairchild Semiconductor
Datasheet
1.FGH75N60UF.pdf
(8 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FGH75N60UF
Manufacturer:
TOSHIBA
Quantity:
4 000
FGH75N60UF Rev. A1
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. V
Figure 9. Capacitance Characteristics
Figure 11. SOA Characteristics
8000
6000
4000
2000
0.01
500
100
0.1
10
20
16
12
0
1
8
4
0
1
1
0
Single Nonrepetitive
Pulse T C = 25 o C
Curves must be derated
linearly with increase
in temperature
Collector-Emitter Voltage, V
Collector-Emitter Voltage, V
4
Gate-Emitter Voltage, V
75A
I
C
C
C
C
10
res
ies
oes
= 40A
8
150A
12
Common Emitter
V
T
C
100
GE
Common Emitter
T
10
= 25
C
= 0V, f = 1MHz
GE
= 25
CE
CE
GE
o
[V]
[V]
C
100
o
10 ms
16
1ms
[V]
DC
C
10
s
s
1000
30
20
4
Figure 10. Gate charge Characteristics
Figure 8. Saturation Voltage vs. V
Figure 12. Load Current vs. Frequency
140
120
100
20
16
12
80
60
40
20
15
12
8
4
0
9
6
3
0
0
1
0
Duty cycle : 50%
T
Powe Dissipation = 181W
C
Common Emitter
T
C
= 100
= 25
o
o
4
50
C
Gate-Emitter Voltage, V
C
I
C
75A
= 40A
Gate Charge, Q
Frequency [kHz]
10
V
load Current : peak of square wave
V
CC
CC
100
8
= 400V
= 100V
200V
150A
12
150
g
100
Common Emitter
T
[nC]
C
GE
= 125
[V]
GE
16
300V
200
o
C
www.fairchildsemi.com
1000
20
250