FGA30N60LSD Fairchild Semiconductor, FGA30N60LSD Datasheet - Page 4

• Manufacturer Part Number: FGA30N60LSD
• Description: The FGA30N60LSD is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors
• Manufacturer: Fairchild Semiconductor

FGA30N60LSD Rev. A
Typical Performance Characteristics
Figure 1.Typical Output Characteristics
Figure 3. Typical Saturation Voltage
Figure 5. Saturation Voltage vs. Case
90
60
30
1.4
1.2
1.0
0.8
0.6
90
60
30
0
0
0
25
0
T
Characteritics
Common Emitter
V
Temperature at Variant Current Level
C
GE
Collector-EmitterCase Temperature, T
= 25
= 15V
Collector-Emitter Voltage, V
o
Collector-Emitter Voltage, V
C
50
1
1
75
2
Common Emitter
V
T
T
I
C
C
C
2
GE
= 15A
= 25
= 125
30A
60A
= 15V
100
CE
CE
3
V
[V]
o
o
[V]
GE
C
C
C
= 20V
[
15V
12V
10V
o
8V
C
]
125
4
3
4
Figure 2. Typical Saturation Voltage
Figure 4. Transfer characteristics
Figure 6. Saturation Voltage vs. Vge
90
60
30
20
16
12
90
60
30
0
8
4
0
0
0
0
0
Common Emitter
V
T
T
C
C
T
CE
C
= 25
= 125
= 20V
= 125
2
Collector-Emitter Voltage, V
o
o
Characteristics
C
C
o
4
Gate-Emitter Voltage, V
C
Gate-Emitter Voltage,V
30A
I
1
C
= 15A
4
8
60A
6
2
12
Common Emitter
T
8
C
GE
GE
= 25
CE
3
[V]
[V]
V
o
16
[V]
GE
C
10
= 20V
15V
12V
10V
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8V
12
20
4