FGH80N60FD Fairchild Semiconductor, FGH80N60FD Datasheet
![no-image](/images/manufacturer_photos/0/2/252/fairchild_semiconductor_sml.jpg)
FGH80N60FD
Available stocks
Related parts for FGH80N60FD
FGH80N60FD Summary of contents
Page 1
... Thermal Resistance, Junction-to-Case JC R Thermal Resistance, Junction-to-Ambient JA ©2009 Fairchild Semiconductor Corporation FGH80N60FD Rev. A2 General Description Using Novel Field Stop IGBT Technology, Fairchild’s new ses- ries of Field Stop IGBTs offer the optimum performance for = 40A C Induction Heating applications where low conduction and switching losses are essential ...
Page 2
... Turn-On Switching Loss on E Turn-Off Switching Loss off E Total Switching Loss ts Q Total Gate Charge g Q Gate-Emitter Charge ge Q Gate-Collector Charge gc FGH80N60FD Rev. A2 Packaging Package Type Qty per Tube TO-247 Tube T = 25°C unless otherwise noted C Test Conditions 250uA ...
Page 3
... Electrical Characteristics of the Diode Symbol Parameter V Diode Forward Voltage FM t Diode Reverse Recovery Time rr I Diode Reverse Recovery Current rr Q Diode Reverse Recovery Charge rr FGH80N60FD Rev 25°C unless otherwise noted C Test Conditions T = 25 20A 125 25C ...
Page 4
... T = 125 Collector-Emitter Voltage, V Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level 3.5 3.0 2.5 2.0 1.5 1 Case Temperature, T FGH80N60FD Rev. A2 Figure 2. Typical Saturation Voltage 160 120 10V [V] CE Figure 4. Transfer Characteristics 160 120 ...
Page 5
... Gate Charge, Q Figure 11. Turn-Off Switching SOA Characteristics 200 100 10 Safe Operating Area 20V 100 Collector-Emitter Voltage, V FGH80N60FD Rev. A2 (Continued) Figure 8. Capacitance Characteristics 5000 Common Emitter 125 C C 4000 3000 2000 1000 80A [V] GE Figure 10. SOA Characteeristics ...
Page 6
... Collector Current, I Figure 17. Switching Loss vs Collector Current 10 Common Emitter 15V 125 0 Collector Current, I FGH80N60FD Rev. A2 (Continued) Figure 14. Turn-On Characteristics vs. 200 100 t d(off Figure 16. Switching Loss vs Gate Resistance 5 t d(off ...
Page 7
... Forward Voltage , V Figure 21. Reverse Recovery Time 140 120 100 o 125 100 5 200 di/dt, [A/ FGH80N60FD Rev. A2 (Continued) 1E-4 1E-3 0.01 Rectangular Pulse Duration [sec] Figure 20. Stored Charge 600 500 o 400 300 200 100 100 [V] F Figure 22. Reverse Recovery Current ...
Page 8
... Mechanical Dimensions TO-247AB (FKS PKG CODE 001) FGH80N60FD Rev www.fairchildsemi.com ...
Page 9
... Definition of Terms Datasheet Identification Product Status Advance Information Formative or In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FGH80N60FD Rev. A2 Power-SPM™ ® PowerTrench Programmable Active Droop™ ® QFET QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ ...