FGH80N60FD Fairchild Semiconductor, FGH80N60FD Datasheet

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FGH80N60FD

Manufacturer Part Number
FGH80N60FD
Description
Manufacturer
Fairchild Semiconductor
Datasheet

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©2009 Fairchild Semiconductor Corporation
FGH80N60FD Rev. A2
Absolute Maximum Ratings
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
FGH80N60FD
600V, 80A Field Stop IGBT
Features
• High current capability
• Low saturation voltage: V
• High input impedance
• Fast switching
• RoHS complaint
Applications
• Induction Heating Application
V
V
I
I
P
T
T
T
R
R
R
C
CM (1)
stg
J
L
CES
GES
D
JC
JC
JA
Symbol
Symbol
(IGBT)
(Diode)
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
CE(sat)
=1.8V @ I
E
COLLECTOR
Description
C
(FLANGE)
Parameter
G
C
= 40A
@ T
@ T
@ T
@ T
@ T
C
C
C
C
1
= 25C
= 100C
= 25C
= 100C
C
= 25C
General Description
Using Novel Field Stop IGBT Technology, Fairchild’s new ses-
ries of Field Stop IGBTs offer the optimum performance for
Induction Heating applications where low conduction and
switching losses are essential.
Typ.
--
--
G
-55 to +150
-55 to +150
Ratings
 20
600
160
290
300
116
80
40
Max.
0.43
1.5
40
E
C
November 2009
www.fairchildsemi.com
Units
Units
C/W
C/W
C/W
C
C
C
W
W
V
V
A
A
A
tm

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FGH80N60FD Summary of contents

Page 1

... Thermal Resistance, Junction-to-Case JC R Thermal Resistance, Junction-to-Ambient JA ©2009 Fairchild Semiconductor Corporation FGH80N60FD Rev. A2 General Description Using Novel Field Stop IGBT Technology, Fairchild’s new ses- ries of Field Stop IGBTs offer the optimum performance for = 40A C Induction Heating applications where low conduction and switching losses are essential ...

Page 2

... Turn-On Switching Loss on E Turn-Off Switching Loss off E Total Switching Loss ts Q Total Gate Charge g Q Gate-Emitter Charge ge Q Gate-Collector Charge gc FGH80N60FD Rev. A2 Packaging Package Type Qty per Tube TO-247 Tube T = 25°C unless otherwise noted C Test Conditions 250uA ...

Page 3

... Electrical Characteristics of the Diode Symbol Parameter V Diode Forward Voltage FM t Diode Reverse Recovery Time rr I Diode Reverse Recovery Current rr Q Diode Reverse Recovery Charge rr FGH80N60FD Rev 25°C unless otherwise noted C Test Conditions T = 25 20A 125 25C ...

Page 4

... T = 125 Collector-Emitter Voltage, V Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level 3.5 3.0 2.5 2.0 1.5 1 Case Temperature, T FGH80N60FD Rev. A2 Figure 2. Typical Saturation Voltage 160 120 10V [V] CE Figure 4. Transfer Characteristics 160 120 ...

Page 5

... Gate Charge, Q Figure 11. Turn-Off Switching SOA Characteristics 200 100 10 Safe Operating Area 20V 100 Collector-Emitter Voltage, V FGH80N60FD Rev. A2 (Continued) Figure 8. Capacitance Characteristics 5000 Common Emitter 125 C C 4000 3000 2000 1000 80A [V] GE Figure 10. SOA Characteeristics ...

Page 6

... Collector Current, I Figure 17. Switching Loss vs Collector Current 10 Common Emitter  15V 125 0 Collector Current, I FGH80N60FD Rev. A2 (Continued) Figure 14. Turn-On Characteristics vs. 200 100 t d(off  Figure 16. Switching Loss vs Gate Resistance 5 t d(off ...

Page 7

... Forward Voltage , V Figure 21. Reverse Recovery Time 140 120 100 o 125 100 5 200  di/dt, [A/ FGH80N60FD Rev. A2 (Continued) 1E-4 1E-3 0.01 Rectangular Pulse Duration [sec] Figure 20. Stored Charge 600 500 o 400 300 200 100 100 [V] F Figure 22. Reverse Recovery Current ...

Page 8

... Mechanical Dimensions TO-247AB (FKS PKG CODE 001) FGH80N60FD Rev www.fairchildsemi.com ...

Page 9

... Definition of Terms Datasheet Identification Product Status Advance Information Formative or In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FGH80N60FD Rev. A2 Power-SPM™ ® PowerTrench Programmable Active Droop™ ® QFET QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ ...

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