FJI5603D Fairchild Semiconductor, FJI5603D Datasheet

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FJI5603D

Manufacturer Part Number
FJI5603D
Description
Manufacturer
Fairchild Semiconductor
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FJI5603DTU
Manufacturer:
FAIRCHILD
Quantity:
8 000
© 2008 Fairchild Semiconductor Corporation
FJI5603D Rev. A3
FJI5603D
NPN Silicon Transistor
Applications
• High Voltage and High Speed Power Switch Application
• Electronic Ballast Application
Features
• Wide Safe Operating Area
• Small Variance in Storage Time
• Built-in Free Wheeling Diode
Absolute Maximum Ratings*
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
** Pulse Test : Pulse Width = 5ms, Duty Cycle < 10%
Thermal Characteristics*
* Device mounted on minimum pad size
Ordering Information
BV
BV
BV
I
I
I
I
P
T
T
R
R
C
CP
B
BP
EAS
J
STG
D
θjc
θja
CBO
CEO
EBO
Symbol
Symbol
Part Number
FJI5603DTU
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current(DC)
Collector Current(Pulse)**
Base Current
Base Current(Pulse)**
Power Dissipation(T
Junction Temperature
Storage Junction Temperature Range
Avalanche Energy(T
Marking
J5603D
C
j
=25°C, 8mH)
=25°C)
T
a
=25°C unless otherwise noted
Parameter
Parameter
T
a
= 25°C unless otherwise noted
Package
I2PAK
1
B
Equivalent Circuit
Packing Method
C
E
TUBE
- 65 ~ +150
Ratings
1.Base
Ratings
1
1600
800
100
150
3.5
1.25
12
3
6
2
4
80
2.Collector
I
2
Remarks
-PAK
www.fairchildsemi.com
June 2008
Units
Units
3.Emitter
°C/W
°C/W
mJ
°C
°C
W
V
V
V
A
A
A
A

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FJI5603D Summary of contents

Page 1

... Symbol R Thermal Resistance, Junction to Case θjc R Thermal Resistance, Junction to Ambient θja * Device mounted on minimum pad size Ordering Information Part Number FJI5603DTU © 2008 Fairchild Semiconductor Corporation FJI5603D Rev. A3 Equivalent Circuit 25°C unless otherwise noted a Parameter =25°C) C =25°C, 8mH =25°C unless otherwise noted ...

Page 2

... Input Capacitance ib C Output Capacitance ob f Current Gain Bandwidth Product T V Diode Forward Voltage F * Pulse Test: Pulse Widt=20µs, Duty Cycle≤10% © 2008 Fairchild Semiconductor Corporation FJI5603D Rev =25°C unless otherwise noted a Test Condition I =0.5mA =5mA ...

Page 3

... Storage Time STG t Fall Time F t Cross-over Time C t Storage Time STG t Fall Time F t Cross-over Time C © 2008 Fairchild Semiconductor Corporation FJI5603D Rev =25°C unless otherwise noted C Test Condition I =0.3A, I =50mA =125V 416Ω =0.5A, I =50mA, I ...

Page 4

... COLLECTOR CURRENT C Figure 3. Collector-Emitter Saturation Voltage = 0.4A I =0. [mA], BASE CURRENT B Figure 5. Typical Collector Saturation Voltage © 2008 Fairchild Semiconductor Corporation FJI5603D Rev 900mA 800mA 700mA 600mA 500mA 400mA 300mA 200mA I =100mA =125 C J ...

Page 5

... =15V CC V =300V =200uH = 0.3 0.4 0.5 0.6 0.7 0.8 0 [A], COLLECTOR CURRENT C Figure 11. Inductive Switching Time, t © 2008 Fairchild Semiconductor Corporation FJI5603D Rev. A3 (Continued =125 = =125 = ...

Page 6

... J 100 100 0.3 0.4 0.5 0.6 0.7 0.8 0 [A], COLLECTOR CURRENT C Figure 15. Inductive Switching Time, t 100 100 C), CASE TEMPERATURE C Figure 17. Power Derating © 2008 Fairchild Semiconductor Corporation FJI5603D Rev. A3 (Continued = 150 200 6 800 700 I =10I = ...

Page 7

... Product Status Advance Information Formative or In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production © 2008 Fairchild Semiconductor Corporation FJI5603D Rev. A3 Green FPS™ Power247 Green FPS™ e-Series™ POWEREDGE GTO™ Power-SPM™ i-Lo™ PowerTrench IntelliMAX™ ...

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