KSC5502DT Fairchild Semiconductor, KSC5502DT Datasheet
![no-image](/images/manufacturer_photos/0/2/252/fairchild_semiconductor_sml.jpg)
KSC5502DT
Available stocks
Related parts for KSC5502DT
KSC5502DT Summary of contents
Page 1
... Pulse Test : Pulse Width = 5ms, Duty Cycle Thermal Characteristics Symbol R Thermal Resistance Maximun Lead Temperature for Soldering Purpose L : 1/8” from Case for 5 seconds ©2001 Fairchild Semiconductor Corporation KSC5502D/KSC5502DT B T =25 C unless otherwise noted C Parameter = = 10% T =25 C unless otherwise noted ...
Page 2
... Collector-Emitter Saturation Voltage CE V (sat) Base-Emitter Saturation Voltage BE C Input Capacitance ib C Output Capacitance ob f Current Gain Bandwidth Product T V Diode Forward Voltage F ©2001 Fairchild Semiconductor Corporation T =25 C unless otherwise noted C Test Condition I =1mA =5mA =500 ...
Page 3
... Turn Off Time OFF INDUCTIVE LOAD SWITCHING (V t Storage Time STG t Fall Time F t Cross-over Time C t Storage Time STG t Fall Time F t Cross-over Time C ©2001 Fairchild Semiconductor Corporation T =25 C unless otherwise noted C Test Condition I =0. =0. = =0.4A, I =80mA =300V ...
Page 4
... Figure 3. Collector-Emitter Saturation Voltage 2 =25 ℃ ℃ ℃ ℃ 1.0A 1 0.4A I =0. 10m 100m I [A], BAS Figure 5. Typical Collector Saturation Voltage ©2001 Fairchild Semiconductor Corporation 1A 900m A 800m A 700m A 100 600m A 500m A 400m A 300m A 200m A I =100m =125 ℃ ...
Page 5
... T J =25 ℃ ℃ ℃ ℃ 1 0.3 0.4 0.5 0.6 0.7 0.8 0 Figure 11. Resistive Switching Time, t ©2001 Fairchild Semiconductor Corporation (Continued =125℃ 2000 F=1MHz 1000 1000 900 800 700 600 500 400 ...
Page 6
... =300V Z L =200uH C 4 3.5 =25 ℃ 2.5 2 0.3 0.4 0.5 0.6 0.7 0 LEC Figure 17. Inductive Switching Time, t ©2001 Fairchild Semiconductor Corporation (Continued =5I = =300V c 2.5 PW=20us 2 =125 ℃ ℃ ℃ ℃ 1 0.3 Figure 14 ...
Page 7
... F E Figure 21. Inductive Switching Time 5ms 1ms DC 1 0.1 0.01 10 100 V [A], CO LLECT OR EM ITTER VO LTAG Figure 23. Forward Bias Safe Operating Area ©2001 Fairchild Semiconductor Corporation (Continued) 2 ℃ ℃ ℃ ℃ ℃ ℃ Figure 20. Inductive Switching Time 200 I ...
Page 8
... Typical Characteristics 10 1ms 5ms DC 1 0.1 0.01 10 100 V [A], CO LLECT OR EM ITTER VO LTAG Figure 25. Forward Bias Safe Operating Area ©2001 Fairchild Semiconductor Corporation (Continued) 60 =25 ℃ ℃ ℃ ℃ 50us 1000 100 125 150 175 200 ( ℃ ...
Page 9
... Package Demensions 1.27 2.54TYP [2.54 ©2001 Fairchild Semiconductor Corporation TO-220 9.90 0.20 (8.70) ø3.60 0.10 1.52 0.10 0.10 0.80 0.10 2.54TYP ] [2.54 ] 0.20 0.20 10.00 0.20 4.50 0.20 +0.10 1.30 –0.05 +0.10 0.50 2.40 0.20 –0.05 Dimensions in Millimeters Rev. A2, August 2001 ...
Page 10
... Package Demensions (0.50) MAX0.96 2.30TYP [2.30 0.20] ©2001 Fairchild Semiconductor Corporation (Continued) D-PAK 6.60 0.20 5.34 0.30 (4.34) (0.50) 0.76 0.10 2.30TYP [2.30 0.20] 6.60 (2XR0.25) 2.30 0.10 0.50 0.10 0.50 0.10 1.02 0.20 2.30 0.20 0.20 (5.34) (5.04) (1.50) 0.76 0.10 Dimensions in Millimeters Rev. A2, August 2001 ...
Page 11
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. A CEx™ FAST FASTr™ Bottomless™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...