FJB102 Fairchild Semiconductor, FJB102 Datasheet

no-image

FJB102

Manufacturer Part Number
FJB102
Description
Manufacturer
Fairchild Semiconductor
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FJB102
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
FJB102 Rev. 1.0.0
© 2007 Fairchild Semiconductor Corporation
FJB102
High Voltage Power Darlington Transistor
• High DC Current Gain : h
• Low Collector-Emitter Saturation Voltage
Absolute Maximum Ratings
* Pulse Test: PW = 300ms, Duty Cycle = 2% Pulsed
Electrical Characteristics
V
V
V
I
I
I
P
T
T
BV
BV
I
I
I
h
V
V
C
C
CP
B
CBO
CEO
EBO
FE
CBO
CEO
EBO
C
J
STG
Symbol
CE(sat)
BE(ON)
Symbol
ob
CEO(sus)
EBO
Collector-Emitter Sustaining Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Output Capatitance
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
* Collector Current (Pulse)
Base Current (DC)
Collector Dissipation (T
Junction Temperature
Storage Temperature
1.Base
1
FE
=1000 @ V
Parameter
2.Collector
Parameter
C
D
= 25°C)
CE
T
2
C
-PAK
=4V, I
= 25°C unless otherwise noted
3.Emitter
C
=3A (Min.)
I
I
V
V
V
V
V
I
I
V
V
C
E
C
C
CB
CE
EB
CE
CE
CE
E
= 30mA, I
= 500mA, I
= 3A, I
= 8A, I
= 10V, I
1
= 5V, I
= 100V, I
= 50V, I
= 4V, I
= 4V, I
= 4V, I
B
B
Conditions
= 6mA
= 80mA
C
C
C
C
E
B
E
C
= 0
= 0, f = 1MHz
= 3A
= 8A
= 8A
E
= 0
= 0
= 0
= 0
B
R1
R2
-65 ~ 150
Value
Equivalent Circuit
@
@
100
100
150
15
80
10kW
0.6kW
5
8
1
R1
Min.
1000
100
200
R2
10
C
E
Max.
20000
200
2.0
2.5
2.8
50
50
2
Units
www.fairchildsemi.com
October 2008
°C
°C
W
V
V
V
A
A
A
Units
mA
mA
mA
pF
V
V
V
V
V

Related parts for FJB102

FJB102 Summary of contents

Page 1

... Collector Cut-off Current CEO I Emitter Cut-off Current EBO h DC Current Gain FE V Collector-Emitter Saturation Voltage CE(sat) V Base-Emitter Saturation Voltage BE(ON) C Output Capatitance ob © 2007 Fairchild Semiconductor Corporation FJB102 Rev. 1.0.0 =4V, I =3A (Min -PAK 3.Emitter Parameter = 25° 25°C unless otherwise noted C Conditions I = 30mA, I ...

Page 2

... Package Marking and Ordering Information Device Marking Device FJB102 FJB102 © 2007 Fairchild Semiconductor Corporation FJB102 Rev. 1.0.0 Package Reel Size 2 D -PAK -- 2 Tape Width Quantity -- -- www.fairchildsemi.com ...

Page 3

... (sat) CE 100 0 [A], COLLECTOR CURRENT C Figure 5. Forward Biased Safe Operating Area 100 0.1 0.01 0 [V], COLLECTOR-EMITTER VOLTAGE CE © 2007 Fairchild Semiconductor Corporation FJB102 Rev. 1.0.0 Figure 2. DC Current Gain 10k I = 300 200 100 100 0 Figure 4. Collector Output Capacitance ...

Page 4

... Mechanical Dimensions © 2007 Fairchild Semiconductor Corporation FJB102 Rev. 1.0.0 D2-PAK 4 Dimensions in Millimeters www.fairchildsemi.com ...

Page 5

... Product Status Advance Information Formative or In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production © 2008 Fairchild Semiconductor Corporation FJB102 Rev. A1 Green FPS™ Power247 Green FPS™ e-Series™ POWEREDGE GTO™ Power-SPM™ i-Lo™ PowerTrench IntelliMAX™ ...

Related keywords