FJP5027 Fairchild Semiconductor, FJP5027 Datasheet
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FJP5027
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FJP5027 Summary of contents
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... Current Gain Bandwidth Product T t Turn On Time ON t Storage Time STG t Fall Time F h Classification FE Classification h FE1 ©2003 Fairchild Semiconductor Corporation FJP5027 T =25 C unless otherwise noted C Parameter = =25 C unless otherwise noted C Test Condition I = 1mA 5mA ...
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... I [A], COLLECTOR CURRENT C Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 10 I =3A L=1mH, V =20V 100 V [V], COLLECTOR-EMITTER VOLTAGE CE Figure 5. Switching Time ©2003 Fairchild Semiconductor Corporation 100 350mA 150mA 100mA 50mA 0. ...
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... Typical Characteristics 10 1 0.1 I =45mA, I =-0. =125V CC 0.01 0 [A], COLLECTOR CURRENT C Figure 7. Resistive Load Switching Characteristics ©2003 Fairchild Semiconductor Corporation (Continued Figure 8. Power Derating 50 75 100 125 150 175 C], CASE TEMPERATURE C Rev. A, December 2003 ...
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... Package Dimensions 1.27 2.54TYP [2.54 ©2003 Fairchild Semiconductor Corporation TO-220 9.90 0.20 (8.70) ø3.60 0.10 1.52 0.10 0.10 0.80 0.10 2.54TYP ] [2.54 ] 0.20 0.20 10.00 0.20 4.50 0.20 +0.10 1.30 –0.05 +0.10 0.50 2.40 0.20 –0.05 Dimensions in Millimeters Rev. A, December 2003 ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT Quiet Series™ ® ActiveArray™ FAST Bottomless™ FASTr™ CoolFET™ FRFET™ ...