This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance
... Storage Temperature STG Electrical Characteristics Symbol Parameter I Collector Cut-off Current CES I Emitter Cut-off Current EBO h *DC Current Gain FE : KSE45H KSE45H 2, 5, 8,11 V (sat) *Collector-Emitter Saturation Voltage CE : KSE45H KSE45H 2, 5, 8,11 V (sat) *Base-Emitter Saturation Voltage BE f Current Gain Bandwidth Product ...
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. A CEx™ FAST FASTr™ Bottomless™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...