KSH41C Fairchild Semiconductor, KSH41C Datasheet

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KSH41C

Manufacturer Part Number
KSH41C
Description
Manufacturer
Fairchild Semiconductor
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
KSH41CTF
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
©2002 Fairchild Semiconductor Corporation
General Purpose Amplifier Low Speed
Switching Applications
D-PAK for Surface Mount Applications
• Lead Formed for Surface Mount Application (No Suffix)
• Straight Lead (I-PAK, “- I” Suffix)
• Electrically Similar to Popular TIP41 and TIP41C
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Electrical Characteristics
* Pulse Test: PW 300 s, Duty Cycle 2%
P
h
V
V
V
I
I
I
T
T
V
I
I
I
V
V
f
C
CP
B
CEO
CES
EBO
T
FE
C
J
STG
CBO
CEO
EBO
CEO
CE
BE
Symbol
Symbol
(on)
(sat)
(sus)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Collector Dissipation (T
Collector Dissipation (T
Junction Temperature
Storage Temperature
* Collector-Emitter Sustaining Voltage
* DC Current Gain
* Collector-Emitter Saturation Voltage
* Base-Emitter On Voltage
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
Current Gain Bandwidth Product
Parameter
a
C
T
=25 C)
=25 C)
C
=25 C unless otherwise noted
Parameter
T
C
=25 C unless otherwise noted
KSH41C
I
V
V
V
V
V
I
V
V
C
C
CE
CE
BE
CE
CE
CE
CE
= 30mA, I
= 6A, I
= 5V, I
= 60V, I
= 4V, I
= 6A, I
= 10V, I
= 100V, V
= 4V, I
Test Condition
1
B
= 600mA
C
C
C
C
B
B
C
= 0
= 3A
= 0.3A
= 4A
= 0
= 0
= 500mA
BE
1.Base
= 0
D-PAK
2.Collector
- 65 ~ 150
Value
1.75
100
100
150
10
20
2
5
6
1
Min.
100
30
15
3
3.Emitter
Max.
0.5
1.5
50
10
75
2
Rev. A4, October 2002
I-PAK
Units
W
W
V
V
A
A
Units
V
A
MHz
C
C
mA
uA
V
V
V
A

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KSH41C Summary of contents

Page 1

... DC Current Gain FE V (sat) * Collector-Emitter Saturation Voltage CE V (on) * Base-Emitter On Voltage BE f Current Gain Bandwidth Product T * Pulse Test: PW 300 s, Duty Cycle 2% ©2002 Fairchild Semiconductor Corporation KSH41C 1 T =25 C unless otherwise noted C Parameter = = =25 C unless otherwise noted C Test Condition I ...

Page 2

... I [A], COLLECTOR CURRENT C Figure 1. DC current Gain 1000 100 [V], COLLECTOR-BASE VOLTAGE CB Figure 3. Collector Capacitance 10 1 0.1 0.01 0.01 0.1 I [A], COLLECTOR CURRENT C Figure 5. Turn Off Time ©2002 Fairchild Semiconductor Corporation 0.1 0.01 0. Figure 2. Base-Emitter Saturation Voltage 10 1 0.1 0.01 0.01 10 100 100 STG ...

Page 3

... Typical Characteristics 100 C], CASE TEMPERATURE C Figure 7. Power Derating ©2002 Fairchild Semiconductor Corporation (Continued) 125 150 175 Rev. A4, October 2002 ...

Page 4

... Package Dimensions (0.50) MAX0.96 2.30TYP [2.30 0.20] ©2002 Fairchild Semiconductor Corporation D-PAK 6.60 0.20 5.34 0.30 (4.34) (0.50) 0.76 0.10 2.30TYP [2.30 0.20] 6.60 (2XR0.25) 2.30 0.10 0.50 0.10 0.50 0.10 1.02 0.20 2.30 0.20 0.20 (5.34) (5.04) (1.50) 0.76 0.10 Dimensions in Millimeters Rev. A4, October 2002 ...

Page 5

... Package Dimensions (0.50) MAX0.96 0.76 0.10 2.30TYP [2.30 0.20] ©2002 Fairchild Semiconductor Corporation (Continued) I-PAK 6.60 0.20 5.34 0.20 (4.34) (0.50) 2.30TYP [2.30 0.20] 2.30 0.20 0.50 0.10 0.50 0.10 Dimensions in Millimeters Rev. A4, October 2002 ...

Page 6

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ ® Bottomless™ FAST CoolFET™ FASTr™ ...

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