FJV3114R Fairchild Semiconductor, FJV3114R Datasheet

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FJV3114R

Manufacturer Part Number
FJV3114R
Description
Manufacturer
Fairchild Semiconductor
Datasheet
©2006 Fairchild Semiconductor Corporation
FJV3114R Rev. B
FJV3114R
NPN Epitaxial Silicon Transistor
Features
• Switching circuit, Inverter, Interface circuit, Driver Circuit
• Built in bias Resistor (R1=4.7KΩ, R2=47KΩ)
• Complement to FJV4114R
Absolute Maximum Ratings *
* These ratings are limiting values above which the serviceability of any semiconductor device may by impaired.
Electrical Characteristics*
* Pulse Test: PW≤300µs, Duty Cycle≤2%
V
V
V
I
T
T
P
V
V
I
h
V
f
C
V
V
R
R
C
CBO
T
STG
J
FE
CBO
CEO
EBO
C
(BR)CBO
(BR)CEO
CE(
I(
I(
Symbol
Symbol
cb
1
1
off
on)
/R
sat
)
2
)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Storage Temperature Range
Junction Temperature
Collector Power Dissipation
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Collector-Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Current Gain - Bandwidth Product
Output
Input Off Voltage
Input On Voltage
Input Resistor
Resistor Ratio
1. Base 2. Emitter 3. Collector
3
Capacitance
Parameter
1
SOT-23
Parameter
2
, by R
T
C
= 25°C unless otherwise noted
θJA
T
a
= 25°C unless otherwise noted
I
I
V
V
I
V
V
V
V
C
C
C
CB
CE
CE
CB
CE
CE
= 10 uA, I
= 100 uA, I
= 10 mA, I
= 40 V, I
= 5 V, I
= 10V, I
= 10 V, I
= 5 V, I
= 0.2V, I
B
Test Condition
R34
1
C
C
C
C
E
E
E
C
= 5 mA
= 100uA
B
= 5 mA
= 0
B
= 0
= 0, f = 1.0 MHz
= 5mA
= 0.5 mA
= 0
E
-55~150
Value
100
150
200
50
50
10
Eqivalent Circuit
MIN
0.09
0.5
3.2
50
50
68
Typ
250
3.7
4.7
0.1
MAX
0.11
November 2006
0.1
0.3
1.3
6.2
Units
www.fairchildsemi.com
mW
mA
°C
°C
V
V
V
Units
MHz
KΩ
uA
pF
V
V
V
V
V
tm

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FJV3114R Summary of contents

Page 1

... Input On Voltage on Input Resistor Resistor Ratio Pulse Test: PW≤300µs, Duty Cycle≤2% ©2006 Fairchild Semiconductor Corporation FJV3114R Rev R34 SOT- 25°C unless otherwise noted a Parameter , by R θ 25°C unless otherwise noted C Test Condition ...

Page 2

... Typical Performance Characteristics Figure 1. DC current Gain 1000 100 [mA], COLLECTOR CURRENT C Figure 3. Collector-Emitter Saturation Voltage 1000 100 [mA], COLLECTOR CURRENT C FJV3114R Rev. B Figure 2. Input On Voltage 4. 47K 2 1 0.1 0.1 100 1000 Figure 4. Power Derating 280 I = 10I ...

Page 3

... Package Dimensions ±0.03 0.40 0.95 FJV3114R Rev. B SOT-23 ±0.03 0.40 0.96~1.14 2.90 ±0.10 ±0.03 0.95 ±0.03 ±0.03 1.90 0.508REF 3 0.03~0.10 0.38 REF +0.05 0.12 –0.023 Dimensions in Millimeters www.fairchildsemi.com ...

Page 4

... PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Preliminary No Identification Needed Obsolete FJV3114R Rev. B OCX™ SILENT SWITCHER OCXPro™ SMART START™ ® OPTOLOGIC SPM™ OPTOPLANAR™ ...

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