FMBS2383 Fairchild Semiconductor, FMBS2383 Datasheet

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FMBS2383

Manufacturer Part Number
FMBS2383
Description
Manufacturer
Fairchild Semiconductor
Datasheet
© 2011 Fairchild Semiconductor Corporation
FMBS2383 Rev. A0
FMBS2383
NPN Epitaxial Silicon Transistor
Features
• Power Amplifier
• Collector-Emitter Voltage : V
• Current Gain Bandwidth Product : f
Absolute Maximum Ratings
* note1) : Minimum land pattern size
Electrical Characteristics
Symbol
Symbol
V
V
BV
BV
BV
CE
V
V
R
BE
V
T
I
I
h
C
CBO
EBO
P
CBO
CEO
EBO
θJA
T
STG
I
I
f
CBO
CEO
FE
C
B
EBO
T
ob
D
(sat)
J
(on)
*
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Power Dissipation
Thermal Resistance, Junction to Ambient
Junction Temperature
Storage Temperature
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage I
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
Output Capacitance
SuperSOT
Parameter
CEO
Marking : 2383
C
=160V
TM
C
T
T
-6
=120MHz
a
E
Parameter
= 25°C unless otherwise noted
T
C
a
= 25°C unless otherwise noted
C
B
I
I
V
V
V
I
V
V
V
C
C
E
C
CB
BE
CE
CE
CE
CB
1
= 10μA, I
= 10mA, I
= 1mA, I
= 500mA, I
= 5V, I
= 120V, I
= 5V, I
= 5V, I
= 5V, I
= 10V, I
Test Condition
2
1
3
C
C
C
C
C
B
B
E
= 0
= 0
= 100mA
= 500mA
= 100mA
= 0
E
B
= 0
= 0, f = 1MHz
= 0
= 50mA
-55 to +150
Value
160
160
800
160
630
200
150
Min.
5
6
4
160
160
5
80
5
Typ.
120
Max.
100
100
160
1.0
1.0
30
www.fairchildsemi.com
Units
°C/W
April 2011
mW
mA
mA
°C
°C
V
V
V
Units
MHz
nA
nA
pF
V
V
V
V
V

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FMBS2383 Summary of contents

Page 1

... DC Current Gain FE V (sat) Collector-Emitter Saturation Voltage CE V (on) Base-Emitter On Voltage BE f Current Gain Bandwidth Product T C Output Capacitance ob © 2011 Fairchild Semiconductor Corporation FMBS2383 Rev. A0 =160V =120MHz Marking : 2383 T = 25°C unless otherwise noted ...

Page 2

... T = 100 0 0. [V], Collector-Base Voltage CB Figure 5. Collector-Base Cutoff Current © 2011 Fairchild Semiconductor Corporation FMBS2383 Rev 100 1000 Figure 2. Collector-Emitter Saturation Voltage 100 1000 100 125 100 ...

Page 3

... V [V], Collector-Base Voltage CB Figure 7. Output Capacitance 100 50% 30% 10 D=1% 1 Single Pulse 0.1 0.01 1E-4 1E-3 0.01 0.1 time(sec) Figure 9. Transient Thermal Resistance © 2011 Fairchild Semiconductor Corporation FMBS2383 Rev. A0 (Continued 1MHz Rthja=200C 100 1000 3 250 200 150 100 [V], Collector-Base Voltage CB Figure 8 ...

Page 4

... Physical Dimensions © 2011 Fairchild Semiconductor Corporation FMBS2383 Rev SuperSOT -6 4 Dimensions in Millimeters www.fairchildsemi.com ...

Page 5

... TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended exhaustive list of all such trademarks. AccuPower F-PFS ® FRFET Auto-SPM Global Power Resource AX-CAP * Green FPS Build it Now Green FPS ...

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