FJV992 Fairchild Semiconductor, FJV992 Datasheet

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FJV992

Manufacturer Part Number
FJV992
Description
Manufacturer
Fairchild Semiconductor
Datasheet

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©2004 Fairchild Semiconductor Corporation
Audio Frequency Low Noise Amplifier
• Complement to FJV1845
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
Electrical Characteristics
h
V
V
V
I
P
T
T
BV
BV
BV
I
h
h
V
V
f
C
NV
C
EBO
T
FE2
Symbol
FE1
FE2
J
STG
CBO
CEO
EBO
C
CE
BE
ob
CBO
CEO
EBO
Symbol
(on)
(sat)
Classification
Classification
h
FE2
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Emitter Breakdown Voltage
Emitter-Base Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
Output Capacitance
Noise Voltage
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Parameter
200 ~ 400
T
a
=25 C unless otherwise noted
P
T
Parameter
a
=25 C unless otherwise noted
Marking
FJV992
2J P
I
I
I
V
V
V
I
V
V
V
V
R
f = 10Hz to 1.0KHz
C
C
E
C
EB
CE
CE
CE
CE
CB
CE
G
= -10 A, I
= -100 A, I
= -1mA, I
= -10mA, I
=100KW, G
= -6V, I
= -6V, I
= -6V, I
= -6V, I
= -6V, I
= -30V, I
= -5.0V, I
Test Condition
h
FE
C
300 ~ 600
B
C
C
C
C
C
Classification
=0
=0
= -0.1mA
= -1mA
B
= -1mA
= -1mA
E
=0
C
E
= -1mA
=0, f=1MHz
V
= 0
= -1.0mA,
F
= 80dB,
1. Base 2. Emitter 3. Collector
-55 ~ 150
Ratings
-0.55
-120
-120
-120
-120
Min.
300
150
150
200
3
-50
50
-5
-5
400 ~ 800
Max.
-0.65
-300
1
800
-30
40
3
E
SOT-23
Units
Rev. C, August 2004
mW
2
mA
V
V
V
C
C
Units
MHz
mV
mV
nA
pF
V
V
V
V

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FJV992 Summary of contents

Page 1

... V (on) Base-Emitter On Voltage BE f Current Gain Bandwidth Product T C Output Capacitance ob NV Noise Voltage h Classification FE2 Classification h FE2 ©2004 Fairchild Semiconductor Corporation FJV992 T =25 C unless otherwise noted a Parameter T =25 C unless otherwise noted a Test Condition I = -100 -1mA ...

Page 2

... C 0 Ta= Ta=-25 C 100 10 -1E-3 -0.01 I [mA], COLLECTOR CURRENT C Figure 3. DC current Gain 1 0 Ta=- Ta= Ta=125 C 0.1 1E-3 0.01 I [mA], COLLECTOR CURRENT C Figure 5. Base-Emitter Saturation Voltage ©2004 Fairchild Semiconductor Corporation - -60 -80 -100 ...

Page 3

... CB Figure 7. Collector Output Capacitance 600 500 400 300 200 100 100 o Ta[ C], AMBIENT TEMPERATURE Figure 9. Power Derating ©2004 Fairchild Semiconductor Corporation (Continued) 1000 1MHz 100 10 1 -100 -1000 0.1 Figure 8. Current Gain Bandwidth Product 125 150 175 V = -6V ...

Page 4

... Package Dimensions 0.40 0.03 2.90 0.95 0.03 1.90 ©2004 Fairchild Semiconductor Corporation SOT-23 0.40 0.03 0.96~1.14 0.10 0.95 0.03 0.508REF 0.03 0.03~0.10 0.38 REF +0.05 0.12 –0.023 Dimensions in Millimeters Rev. C, August 2004 ...

Page 5

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ® A FAST CEx™ FASTr™ ActiveArray™ FPS™ Bottomless™ FRFET™ CoolFET™ GlobalOptoisolator™ ...

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