FJX3906 Fairchild Semiconductor, FJX3906 Datasheet
FJX3906
Manufacturer Part Number
FJX3906
Description
Manufacturer
Fairchild Semiconductor
Datasheet
1.FJX3906.pdf
(4 pages)
©2002 Fairchild Semiconductor Corporation
General Purpose Transistor
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
Electrical Characteristics
* Pulse Test: Pulse Width 300 s, Duty Cycle 2%
V
V
V
I
P
T
BV
BV
BV
I
h
V
V
f
C
NF
t
t
C
CEX
T
ON
OFF
FE
CBO
CES
EBO
C
STG
Symbol
CE
BE
ob
CBO
CEO
EBO
Symbol
(sat)
(sat)
Collector-Base Breakdown Voltage
* Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
* DC Current Gain
* Collector-Emitter Saturation Voltage
* Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
Noise Figure
Turn On Time
Turn Off Time
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Storage Temperature
Parameter
T
a
=25 C unless otherwise noted
T
Parameter
a
=25 C unless otherwise noted
FJX3906
Marking
S 2 A
I
I
I
V
V
V
V
V
V
I
I
I
I
I
V
f=1.0MHz
I
R
f=10Hz to 15.7KHz
V
I
V
I
C
C
E
C
C
C
C
C
C
C
B1
CE
CE
CE
CE
CE
CE
CB
CC
CC
S
= -10 A, I
= -1.0mA, I
=10 A, I
= -10mA, I
= -50mA, I
= -10mA, I
= -50mA, I
= -10mA, V
= -10 A, V
= -10mA, I
=1K
=I
= -30V, V
= -1V, I
= -1V, I
= -1V, I
= -1V, I
= -1V, I
= -5V, I
= -3V, V
= -3V, I
B2
=1mA
Test Condition
C
C
C
C
C
C
E
C
=0
E
BE
=0
= -0.1mA
= -1mA
= -10mA
= -50mA
= -100mA
B
B
B
B
B1
= -10mA
CE
=0
B
EB
CE
= -1mA
= -5mA
= -1mA
= -5mA
=0
= -0.5V
= -1mA
= -5V
= -3V
= -20V
1. Base 2. Emitter 3. Collector
-55 ~ 150
3
Value
-200
350
-40
-40
-5
-0.65
Min.
100
250
-40
-40
60
80
60
30
-5
1
-0.25
-0.85
-0.95
Max.
300
-0.4
300
-50
4.5
70
4
SOT-323
Rev. A2, August 2002
2
Units
mW
mA
V
V
V
C
Units
MHz
nA
dB
pF
ns
ns
V
V
V
V
V
V
V
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FJX3906 Summary of contents
Page 1
... Current Gain Bandwidth Product T C Output Capacitance ob NF Noise Figure t Turn On Time ON t Turn Off Time OFF * Pulse Test: Pulse Width 300 s, Duty Cycle 2% ©2002 Fairchild Semiconductor Corporation FJX3906 T =25 C unless otherwise noted a Parameter T =25 C unless otherwise noted a Test Condition ...
Page 2
... I [A], COLLECTOR CURRENT C Figure 1. DC current Gain -10 V [V], COLLECTOR-BASE VOLTAGE CB Figure 3. Output Capacitance ©2002 Fairchild Semiconductor Corporation - - -0.1 -0.01 -100 -1000 -0.1 Figure 2. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 1000 1MHz 100 10 -0 ...
Page 3
... Package Dimensions 2.00±0.20 1.25±0.10 1.00±0.10 ©2002 Fairchild Semiconductor Corporation SOT-323 2.10±0.10 0.95±0.15 ±0.10 +0.05 0.05 –0.02 0.275±0.100 3° +0.04 0.135 –0.01 0.10 Min 3° 0.90 1.30±0.10 Dimensions in Millimeters Rev. A2, August 2002 ...
Page 4
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ ® Bottomless™ FAST CoolFET™ FASTr™ ...