SS9012 Fairchild Semiconductor, SS9012 Datasheet
SS9012
Manufacturer Part Number
SS9012
Description
Manufacturer
Fairchild Semiconductor
Datasheet
1.SS9012.pdf
(4 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SS9012-G
Manufacturer:
FSC
Quantity:
8 000
Part Number:
SS9012GBU
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
©2002 Fairchild Semiconductor Corporation
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
Electrical Characteristics
h
1W Output Amplifier of Potable Radios in
Class B Push-pull Operation.
• High total power dissipation. (P
• High Collector Current. (I
• Complementary to SS9013
• Excellent h
V
V
V
I
P
T
T
BV
BV
BV
I
I
h
h
V
V
V
C
CBO
EBO
FE
Symbol
J
STG
FE1
FE2
CBO
CEO
EBO
C
CE
BE
BE
CBO
CEO
EBO
Symbol
(sat)
(on)
(sat)
Classification
Classification
h
FE1
FE
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
linearity.
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
C
Parameter
= -500mA)
T
=625mW)
64 ~ 91
D
T
a
=25 C unless otherwise noted
T
Parameter
a
=25 C unless otherwise noted
78 ~ 112
SS9012
I
I
I
V
V
V
V
I
I
V
C
C
E
C
C
E
CB
EB
CE
CE
CE
= -100 A, I
= -100 A, I
= -1mA, I
= -500mA, I
= -500mA, I
= -3V, I
= -25V, I
= -1V, I
= -1V, I
= -1V, I
Test Condition
C
B
C
C
C
E
=0
=0
C
= -50mA
= -500mA
= -10mA
E
B
B
=0
=0
=0
96 ~ 135
= -50mA
= -50mA
F
1. Emitter 2. Base 3. Collector
Min.
1
-0.6
-40
-20
64
40
-5
112 ~ 166
-55 ~ 150
Ratings
-500
625
G
150
-40
-20
-5
-0.18
-0.95
-0.67
Typ.
120
90
TO-92
Max.
-100
-100
202
-0.6
-1.2
-0.7
144 ~ 202
Rev. A4, November 2002
Units
H
mW
mA
V
V
V
C
C
Units
nA
nA
V
V
V
V
V
V
Related parts for SS9012
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
Fairchild Semiconductor [IGBT MODULE]
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
SS9012 Summary of contents
Page 1
... V (sat) Collector-Emitter Saturation Voltage CE V (sat) Base-Emitter Saturation Voltage BE V (on) Base-Emitter On Voltage BE h Classification FE Classification FE1 ©2002 Fairchild Semiconductor Corporation SS9012 T =25 C unless otherwise noted a Parameter T =25 C unless otherwise noted a Test Condition I = -100 -1mA -100 A, I ...
Page 2
... V [V], COLLECTOR-EMITTER VOLTAGE CE Figure 1. Static Characteristic -1000 V (sat) BE -100 -10 -10 -100 I [mA], COLLECTOR CURRENT C Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage ©2002 Fairchild Semiconductor Corporation 1000 I =-200 =-150 A B 100 I =-100 =- -10 -30 -40 -50 1000 100 ...
Page 3
... Package Dimensions 0.46 0.10 1.27TYP [1.27 ] 0.20 ©2002 Fairchild Semiconductor Corporation TO-92 +0.25 4.58 –0.15 1.27TYP [1.27 ] 0.20 3.60 0.20 (R2.29) +0.10 0.38 –0.05 Dimensions in Millimeters Rev. A4, November 2002 ...
Page 4
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ ® Bottomless™ FAST CoolFET™ FASTr™ ...