KST43 Fairchild Semiconductor, KST43 Datasheet

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KST43

Manufacturer Part Number
KST43
Description
Manufacturer
Fairchild Semiconductor
Datasheet
©2002 Fairchild Semiconductor Corporation
High Voltage Transistor
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Electrical Characteristics
* Pulse Test: PW 300 s, Duty Cycle 2%
V
V
V
I
P
T
R
BV
BV
BV
I
I
h
V
V
C
f
C
CBO
EBO
T
FE
CBO
CEO
EBO
C
STG
Symbol
CE
BE
TH
ob
CBO
CEO
EBO
(j-a)
Symbol
(sat)
(sat)
Collector-Emitter Breakdown Voltage
* Collector -Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
* DC Current Gain
* Collector-Emitter Saturation Voltage
* Base-Emitter Saturation Voltage
Output Capacitance
Current Gain Bandwidth Product
Collector Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Storage Temperature
Thermal Resistance junction to Ambient
Parameter
: KST42
: KST43
: KST42
: KST43
: KST42
: KST43
T
a
=25 C unless otherwise noted
T
: KST42
: KST43
: KST42
: KST43
Parameter
a
=25 C unless otherwise noted
KST42/43
I
I
I
V
V
V
V
V
I
I
V
f=1MHz
V
f=100MHz
C
C
E
C
C
CB
CB
CE
CE
CE
CB
CE
=100 A, I
=1mA, I
=100 A, I
=20mA, I
=20mA, I
=200V, I
=5V, I
=10V, I
=10V, I
=10V, I
=20V, I
=20V, I
Test Condition
B
C
=0
C
C
C
B
B
E
C
=0
E
C
E
=1mA
=10mA
=30mA
=2mA
=2mA
=0
=10mA
=0
=0
=0
1. Base 2. Emitter 3. Collector
3
Value
300
200
300
200
500
350
150
357
6
Min.
300
200
300
200
25
40
40
50
6
1
SOT-23
Max.
0.1
0.1
0.5
0.9
3
4
Rev. A2, November 2002
2
Units
mW
mA
C/W
V
V
V
V
V
C
Units
MHz
pF
pF
V
V
V
V
V
V
V
A
A

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KST43 Summary of contents

Page 1

... I =1mA =10V, I =10mA =10V, I =30mA =20mA, I =2mA =20mA, I =2mA KST42 V =20V KST43 f=1MHz V =20V, I =10mA CE C f=100MHz 3 2 SOT- Base 2. Emitter 3. Collector Value Units 300 V 200 V 300 V 200 500 mA 350 mW 150 ...

Page 2

... Marking Code Type Mark ©2002 Fairchild Semiconductor Corporation KST42 1D Marking 1 D KST43 1E Rev. A2, November 2002 ...

Page 3

... V = 10V CE 100 [mA], COLLECTOR CURRENT C Figure 1. DC current Gain 100 [V], COLLECTOR-BASE VOLTAGE CB Figure 3. Collector-Base Capacitance ©2002 Fairchild Semiconductor Corporation 10 1 0.1 0.01 1 100 Figure 2. Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage 120 1MHz 100 100 1 Figure 4 ...

Page 4

... Package Dimensions 0.40 0.03 2.90 0.95 0.03 1.90 ©2002 Fairchild Semiconductor Corporation SOT-23 0.40 0.03 0.96~1.14 0.10 0.95 0.03 0.508REF 0.03 0.03~0.10 0.38 REF +0.05 0.12 –0.023 Dimensions in Millimeters Rev. A2, November 2002 ...

Page 5

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ ® Bottomless™ FAST CoolFET™ FASTr™ ...

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