KSP05 Fairchild Semiconductor, KSP05 Datasheet

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KSP05

Manufacturer Part Number
KSP05
Description
Manufacturer
Fairchild Semiconductor
Datasheet

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Part Number:
KSP05-TA
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©2002 Fairchild Semiconductor Corporation
Amplifier Transistor
• Collector-Emitter Voltage: V
• Collector Dissipation: P
• Complement to KSP55/56
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Electrical Characteristics
* Pulse Test: PW 300 s, Duty Cycle 2%
V
V
V
I
P
T
T
BV
BV
I
I
h
V
V
f
C
CBO
CEO
T
Symbol
FE
J
STG
CBO
CEO
EBO
C
CE
BE
CEO
EBO
Symbol
(on)
(sat)
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Collector Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
Collector Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
C
(max)=625mW
CEO
Parameter
= KSP05: 60V
KSP06: 80V
: KSP05
: KSP06
: KSP05
: KSP06
T
a
=25 C unless otherwise noted
T
Parameter
: KSP05
: KSP06
: KSP05
: KSP06
a
=25 C unless otherwise noted
KSP05/06
I
I
V
V
V
V
V
I
V
V
f=100MHz
C
E
C
CB
CB
CE
CE
CE
CE
CE
=100 A, I
=1mA, I
=100mA, I
=60V, I
=80V, I
=60V, I
=1V, I
=1V, I
=1V, I
=2V, I
Test Condition
B
C
C
C
C
=0
E
E
B
=10mA
=100mA
=100mA
=10mA
C
=0
=0
=0
B
=0
=10mA
1. Emitter 2. Base 3. Collector
1
-55~150
Value
500
625
150
60
80
60
80
4
Min.
100
60
80
50
50
4
TO-92
Max.
0.25
0.1
0.1
0.1
1.2
Rev. A2, September 2002
Units
mW
mA
V
V
V
V
V
C
C
Units
MHz
V
V
V
V
V
A
A
A

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KSP05 Summary of contents

Page 1

... Amplifier Transistor • Collector-Emitter Voltage KSP05: 60V CEO • Collector Dissipation: P (max)=625mW C • Complement to KSP55/56 NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Symbol V Collector Base Voltage CBO V Collector-Emitter Voltage CEO V Emitter-Base Voltage EBO I Collector Current C P Collector Power Dissipation C T Junction Temperature ...

Page 2

... Typical Characteristics 1000 100 [mA], COLLECTOR CURRENT C Figure 1. DC current Gain 1000 100 10 1 0.0 0.2 0.4 0.6 V [V], BASE-EMITTER VOLTAGE BE Figure 3. Base-Emitter On Voltage ©2002 Fairchild Semiconductor Corporation 0.1 0.01 100 1000 1 Figure 2. Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage 1000 100 10 0.8 1.0 1.2 1 Figure 4. Current Gain Bandwidth Product ...

Page 3

... Package Dimensions 0.46 0.10 1.27TYP [1.27 ] 0.20 ©2002 Fairchild Semiconductor Corporation TO-92 +0.25 4.58 –0.15 1.27TYP [1.27 ] 0.20 3.60 0.20 (R2.29) +0.10 0.38 –0.05 Dimensions in Millimeters Rev. A2, September 2002 ...

Page 4

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ ® Bottomless™ FAST CoolFET™ FASTr™ ...

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