FDPC8011S Fairchild Semiconductor, FDPC8011S Datasheet
FDPC8011S
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FDPC8011S Summary of contents
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... Package Marking and Ordering Information Device Marking Device 13OD/15OD FDPC8011S ©2012 Fairchild Semiconductor Corporation FDPC8011S Rev.C2 General Description = This device includes two specialized N-Channel MOSFETs in a dual package. The switch node has been internally connected enable easy placement and routing of synchronous buck D converters ...
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... Q Total Gate Charge g Q Total Gate Charge g Q Gate to Source Gate Charge gs Q Gate to Drain “Miller” Charge gd ©2012 Fairchild Semiconductor Corporation FDPC8011S Rev. °C unless otherwise noted J Test Conditions = 250 μ mA 250 μ ...
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... Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0 based on starting Q2 based on starting ©2012 Fairchild Semiconductor Corporation FDPC8011S Rev. °C unless otherwise noted J Test Conditions ...
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... Junction Temperature 40 μ PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 150 1.0 1.5 2 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics ©2012 Fairchild Semiconductor Corporation FDPC8011S Rev. °C unless otherwise noted J 4.0 3.5 3 2.0 1.5 1.0 μ s 0.5 0.9 1.2 1.5 Figure ...
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... MAX RATED 151 C/W θ 0.01 0.01 0 DRAIN to SOURCE VOLTAGE (V) DS Figure 11. Forward Bias Safe Operating Area ©2012 Fairchild Semiconductor Corporation FDPC8011S Rev. °C unless otherwise noted J 2000 1000 100 ...
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... Typical Characteristics (Q1 N-Channel) 2 DUTY CYCLE-DESCENDING ORDER 0.5 0.2 0.1 0.05 0.1 0.02 0.01 0.01 0.001 - Figure 13. ©2012 Fairchild Semiconductor Corporation FDPC8011S Rev. °C unless otherwise noted J SINGLE PULSE 151 C/W θ JA (Note 1b RECTANGULAR PULSE DURATION (sec) Junction-to-Ambient Transient Thermal Response Curve ...
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... PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 100 125 1.0 1.5 2 GATE TO SOURCE VOLTAGE (V) GS Figure 18. Transfer Characteristics ©2012 Fairchild Semiconductor Corporation FDPC8011S Rev. unlenss otherwise noted 2 μ s 0.6 0.8 1.0 Figure 15. Normalized on-Resistance vs Drain 50 75 100 125 150 ...
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... T = MAX RATED J 0 135 C/W θ 0.01 0.01 0 DRAIN to SOURCE VOLTAGE (V) DS Figure 24. Forward Bias Safe Operating Area ©2012 Fairchild Semiconductor Corporation FDPC8011S Rev. unlenss otherwise noted 100 100 1000 μ ...
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... Typical Characteristics (Q2 N-Channel) 2 DUTY CYCLE-DESCENDING ORDER 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 1E-3 1E Figure 26. Junction-to-Ambient Transient Thermal Response Curve ©2012 Fairchild Semiconductor Corporation FDPC8011S Rev. unlenss otherwise noted J SINGLE PULSE 135 C/W θ JA (Note 1b RECTANGULAR PULSE DURATION (sec) ...
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... SyncFET Schottky body diode Characteristics TM Fairchild’s SyncFET process embeds a Schottky diode in parallel with PowerTrench MOSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 27 shows the reverse recovery characteristic of the FDPC8011S di/dt = 300 ...
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... Dimensional Outline and Pad Layout ©2012 Fairchild Semiconductor Corporation FDPC8011S Rev.C2 11 www.fairchildsemi.com ...
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... Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production ©2012 Fairchild Semiconductor Corporation FDPC8011S Rev.C2 ® PowerTrench PowerXS™ SM Programmable Active Droop™ ® QFET QS™ Quiet Series™ RapidConfigure™ ™ ...