FDMS3620S Fairchild Semiconductor, FDMS3620S Datasheet - Page 5

• Manufacturer Part Number: FDMS3620S
• Description: This device includes two specialized N-Channel MOSFETs in a dual PQFN package
• Manufacturer: Fairchild Semiconductor

FDMS3620S Rev.C
©2012 Fairchild Semiconductor Corporation
Typical Characteristics (Q1 N-Channel)
0.01
100
0.1
10
30
10
10
Figure 7.
0.001
8
6
4
2
0
1
1
0.01
0
I
Figure 9.
THIS AREA IS
LIMITED BY r
D
SINGLE PULSE
T
R
T
Figure 11. Forward Bias Safe
J
A
= 17.5 A
θ
JA
= MAX RATED
= 25
= 125
4
Switching Capability
V
0.01
o
C
DS
Gate Charge Characteristics
t
0.1
o
AV
, DRAIN to SOURCE VOLTAGE (V)
Operating Area
C/W
DS
Unclamped Inductive
, TIME IN AVALANCHE (ms)
8
Q
(
on
g
, GATE CHARGE (nC)
)
T
0.1
V
12
J
DD
= 125
= 10 V
1
o
16
C
T
V
J
DD
1
= 25
= 13 V
20
T
J
V
o
10
= 100
DD
C
= 15 V
10
24
o
C
10 ms
DC
100
1 ms
100 ms
1s
10s
μ
s
100
28
50
T
J
5
= 25°C unless otherwise noted
2000
1000
1000
100
100
80
70
60
50
40
30
20
10
0.5
10
Figure 10.
10
0
1
10
25
0.1
Figure 12.
-4
Limited by Package
R
Figure 8.
f = 1 MHz
V
Current vs Case Temperature
θ
GS
JC
10
= 3.0
= 0 V
-3
V
50
DS
Maximum Continuous Drain
Power Dissipation
to Source Voltage
o
T
, DRAIN TO SOURCE VOLTAGE (V)
C/W
C
10
t, PULSE WIDTH (sec)
Single Pulse Maximum
Capacitance vs Drain
,
V
CASE TEMPERATURE (
GS
-2
= 4.5 V
75
10
1
-1
1
V
100
GS
= 10 V
SINGLE PULSE
R
10
o
θ
C )
JA
125
= 125
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10
100
C
C
C
rss
oss
iss
o
C/W
1000
150
30