FDD86540 Fairchild Semiconductor, FDD86540 Datasheet - Page 2

• Manufacturer Part Number: FDD86540
• Description: This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers
• Manufacturer: Fairchild Semiconductor

©2012 Fairchild Semiconductor Corporation
FDD86540 Rev. C
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
Notes:
1: R
2: Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3: Starting T
BV
ΔBV
I
I
V
r
g
C
C
C
R
t
t
t
t
Q
Q
Q
Q
V
t
Q
ΔV
DSS
GSS
d(on)
r
d(off)
f
rr
DS(on)
FS
GS(th)
SD
ΔT
ΔT
iss
oss
rss
g
g
g
gs
gd
rr
R
Symbol
DSS
θJA
θJC
GS(th)
DSS
J
J
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
is guaranteed by design while R
J
= 25
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
Source-Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
°
C, L = 0.3 mH, I
AS
Parameter
= 39 A, V
θJA
is determined by the user’s board design.
DD
a)
= 54 V, V
40 °C/W when mounted on a
1 in
T
J
2
= 25 °C unless otherwise noted
pad of 2 oz copper
GS
= 10 V.
V
I
V
V
V
V
I
I
V
V
V
f = 1 MHz
V
V
V
V
V
V
I
D
D
D
F
GS
GS
GS
GS
DS
DS
GS
DS
DD
GS
GS
GS
GS
GS
= 250 μA, referenced to 25 °C
= 21.5 A, di/dt = 100 A/μs
= 250 μA, V
= 250 μA, referenced to 25 °C
= 10 V, I
= 48 V, V
= V
= 10 V, I
= 8 V, I
= 10 V, I
= 30 V, V
= 30 V, I
= 10 V, R
= 0 V to 10 V
= 0 V to 8 V
= 0 V, I
= 0 V, I
= ±20 V, V
DS
2
Test Conditions
, I
D
S
S
D
D
D
D
D
= 19.5 A
= 21.5 A
= 2.6 A
GS
GS
GEN
GS
= 250 μA
= 21.5 A
= 21.5 A, T
= 21.5 A
= 21.5 A,
DS
= 0 V
= 0 V,
= 0 V
= 0 V
= 6 Ω
V
I
D
DD
= 21.5 A
= 30 V,
J
(Note 2)
(Note 2)
= 125 °C
Min
60
2
b)
96 °C/W when mounted on
a minimum pad
4767
1409
0.6
6.9
0.8
0.7
Typ
3.1
-11
3.4
4.1
5.2
48
26
15
31
65
54
23
12
56
43
75
28
6340
1880
±100
Max
4.1
6.3
1.3
1.2
42
28
49
14
90
75
90
90
69
4
5
1
www.fairchildsemi.com
mV/°C
mV/°C
Units
mΩ
nC
nC
nC
nC
nC
μA
nA
pF
pF
pF
ns
ns
ns
ns
ns
Ω
V
V
V
V
S