FDMS015N04B Fairchild Semiconductor, FDMS015N04B Datasheet - Page 3

• Manufacturer Part Number: FDMS015N04B
• Manufacturer: Fairchild Semiconductor

FDMS015N04B Rev. C1
Typical Performance Characteristics
10000
Figure 5. Capacitance Characteristics
Figure 3. On-Resistance Variation vs.
1000
Figure 1. On-Region Characteristics
500
100
100
1.3
1.2
1.1
1.0
0.9
10
50
0.1
0.1
0
*Note:
C iss = C gs + C gd
C oss = C ds + C gd
C rss = C gd
1. V
2. f = 1MHz
50
Drain Current and Gate Voltage
GS
V
*Notes:
V
DS
1. 250
2. T
DS
= 0V
, Drain-Source Voltage [V]
, Drain-Source Voltage[V]
I
C
D
100
, Drain Current [A]
= 25
m
s Pulse Test
(
V
C ds = shorted
V
1
o
GS
C
GS
= 10V
= 20V
150
)
*Note: T
200
V
GS
10
1
= 15.0V
C
250
10.0V
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V
= 25
C
C
C
iss
oss
rss
o
C
300
40
2
3
Figure 2. Transfer Characteristics
Figure 4. Body Diode Forward Voltage
Figure 6. Gate Charge Characteristics
400
100
400
100
10
10
10
1
1
8
6
4
2
0
2.5
0.2
0
*Notes:
1. V
2. 250
3.0
V
DS
SD
Variation vs. Source Current
and Temperature
0.4
m
= 10V
, Body Diode Forward Voltage [V]
s Pulse Test
V
150
150
Q
25
GS
3.5
g
, Gate-Source Voltage[V]
o
, Total Gate Charge [nC]
o
C
C
V
V
V
0.6
DS
DS
DS
4.0
= 8V
= 20V
= 32V
50
4.5
0.8
-55
*Notes:
1. V
2. 250
*Note: I
25
o
25
GS
C
5.0
o
C
m
o
= 0V
C
s Pulse Test
75
1.0
D
= 50A
5.5
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6.0
1.2
100