FCP380N60 Fairchild Semiconductor, FCP380N60 Datasheet - Page 3

• Manufacturer Part Number: FCP380N60
• Manufacturer: Fairchild Semiconductor

FCP380N60 / FCPF380N60 Rev. C4
Typical Performance Characteristics
Figure 5. Capacitance Characteristics
Figure 3. On-Resistance Variation vs.
10000
Figure 1. On-Region Characteristics
1000
1.2
1.0
0.8
0.6
0.4
0.2
0.1
100
50
10
0.1
10
1
0.1
1
0
0.1
V
C iss = C gs + C gd (C ds = shorted)
C oss = C ds + C gd
C rss = C gd
GS
*Note:
1. V
2. f = 1MHz
= 15.0V
Drain Current and Gate Voltage
10.0V
5
GS
V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
V
DS
DS
= 0V
, Drain-Source Voltage [V]
, Drain-Source Voltage[V]
1
I
D
10
, Drain Current [A]
V
GS
15
1
10
= 10V
*Notes:
1. 250
2. T
*Note: T
20
C
= 25
μ
V
s Pulse Test
GS
100
C
o
C
C
C
= 20V
C
rss
oss
25
= 25
iss
o
C
1000
10
30
3
Figure 2. Transfer Characteristics
Figure 4. Body Diode Forward Voltage
Figure 6. Gate Charge Characteristics
100
100
10
10
1
1
10
0.3
3
8
6
4
2
0
0
*Notes:
1. V
2. 250
V
DS
SD
μ
Variation vs. Source Current
and Temperature
4
= 20V
s Pulse Test
, Body Diode Forward Voltage [V]
V
0.6
GS
150
Q
9
, Gate-Source Voltage[V]
g
, Total Gate Charge [nC]
o
C
V
V
V
150
DS
DS
DS
5
-55
o
= 120V
= 300V
= 480V
C
o
0.9
25
C
18
o
C
6
*Notes:
1. V
2. 250
25
o
GS
*Note: I
C
μ
1.2
= 0V
s Pulse Test
27
7
D
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= 5A
1.5
8
36