FDPF4N60NZ Fairchild Semiconductor, FDPF4N60NZ Datasheet

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FDPF4N60NZ

Manufacturer Part Number
FDPF4N60NZ
Description
Manufacturer
Fairchild Semiconductor
Datasheet
©2011 Fairchild Semiconductor Corporation
FDP4N60NZ / FDPF4N60NZ Rev.C0
MOSFET Maximum Ratings
*Drain current limited by maximum junction temperature
Thermal Characteristics
V
V
I
I
E
I
E
dv/dt
P
T
T
R
R
R
FDP4N60NZ / FDPF4N60NZ
N-Channel MOSFET
600V, 3.8A, 2.5Ω
Features
• R
• Low Gate Charge ( Typ. 8.3nC)
• Low C
• Fast Switching
• 100% Avalanche Tested
• Improved dv/dt Capability
• ESD Improved Capability
• RoHS Compliant
D
DM
AR
J
L
DSS
GSS
AS
AR
D
θJC
θCS
θJA
, T
Symbol
Symbol
DS(on)
STG
rss
= 1.9Ω ( Typ.)@ V
G D S
( Typ. 3.7pF)
Thermal Resistance, Junction to Case
Thermal Resistance, Case to Sink Typ
Thermal Resistance, Junction to Ambient
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
TO-220
FDP Series
GS
= 10V, I
D
= 1.9A
T
C
= 25
Parameter
Parameter
-Continuous (T
-Continuous (T
- Pulsed
(T
- Derate above 25
o
C
C unless otherwise noted*
= 25
G
D
o
S
C)
C
C
1
= 25
= 100
o
C
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switching mode power supplies and active power factor
correction.
TO-220F
FDPF Series
o
C)
o
C)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
FDP4N60NZ FDPF4N60NZ
FDP4N60NZ FDPF4N60NZ
0.71
62.5
3.8
2.3
1.4
0.5
15
89
G
G
-55 to +150
223.8
600
±25
300
UniFET-II
3.8
8.9
10
December 2011
0.22
3.8*
2.3*
62.5
15*
28
4.5
D
D
S
S
www.fairchildsemi.com
Units
W/
Units
o
V/ns
C/W
mJ
mJ
o
o
W
V
V
A
A
A
C
C
o
C
TM

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FDPF4N60NZ Summary of contents

Page 1

... R Thermal Resistance, Case to Sink Typ θCS R Thermal Resistance, Junction to Ambient θJA ©2011 Fairchild Semiconductor Corporation FDP4N60NZ / FDPF4N60NZ Rev.C0 = 1.9A D Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to ...

Page 2

... G ≤ 3.8A, di/dt ≤ 200A/μs, V ≤ Starting DSS 4. Pulse Test: Pulse width ≤ 300μs, Dual Cycle ≤ Essentially Independent of Operating Temperature Typical Characteristics FDP4N60NZ / FDPF4N60NZ Rev.C0 Package Reel Size TO-220 TO-220F unless otherwise noted C Test Conditions I = 250μ ...

Page 3

... 1MHz ( C iss = shorted C oss = rss = 0 Drain-Source Voltage [V] DS FDP4N60NZ / FDPF4N60NZ Rev.C0 Figure 2. Transfer Characteristics 10 1 *Notes: μ 1. 250 s Pulse Test 0 Figure 4. Body Diode Forward Voltage 40 ...

Page 4

... Single Pulse 0. Drain-Source Voltage [V] DS Figure 11. Unclamped Inductive Switching Capability 125 0.01 0 TIME IN AVALANCHE (ms) AV FDP4N60NZ / FDPF4N60NZ Rev.C0 (Continued) Figure 8. On-Resistance Variation 3.0 2.5 2.0 1.5 1.0 *Notes: 0 μ 250 A D 0.0 100 150 200 -100 Figure 10 ...

Page 5

... Typical Performance Characteristics 5 0.5 1 0.2 0.1 0.05 0.02 0.1 0.01 Single pulse 0. FDP4N60NZ / FDPF4N60NZ Rev.C0 (Continued) Figure 12. Transient Thermal Response Curve - Rectangular Pulse Duration [sec *Notes (t) = 4.5 C/W Max. θ Duty Factor (t) θ ...

Page 6

... FDP4N60NZ / FDPF4N60NZ Rev.C0 Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms 6 www.fairchildsemi.com ...

Page 7

... Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) FDP4N60NZ / FDPF4N60NZ Rev.C0 Peak Diode Recovery dv/dt Test Circuit & Waveforms + + DUT DUT Driver Driver Same Type Same Type as DUT as DUT GS GS • ...

Page 8

... Package Dimensions FDP4N60NZ / FDPF4N60NZ Rev.C0 TO-220 8 Dimensions in Millimeters www.fairchildsemi.com ...

Page 9

... Package Dimensions * Front/Back Side Isolation Voltage : AC 2500V FDP4N60NZ / FDPF4N60NZ Rev.C0 TO-220F 9 Dimensions in Millimeters www.fairchildsemi.com ...

Page 10

... PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDP4N60NZ / FDPF4N60NZ Rev.C0 ® ® PowerTrench SM PowerXS™ Programmable Active Droop™ ® QFET QS™ Quiet Series™ RapidConfigure™ ...

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