FDMC8321L Fairchild Semiconductor, FDMC8321L Datasheet - Page 4

• Manufacturer Part Number: FDMC8321L
• Description: This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or convertional switching PWM contollers
• Manufacturer: Fairchild Semiconductor

FDMC8321L Rev.C
Typical Characteristics
0.01
200
100
100
0.1
10
10
10
Figure 7.
8
6
4
2
0
1
1
0.01
0.01
0
I
D
THIS AREA IS
LIMITED BY r
Figure 9.
Figure 11. Forward Bias Safe
= 22 A
Switching Capability
V
10
DS
Gate Charge Characteristics
0.1
0.1
t
SINGLE PULSE
T
R
T
AV
, DRAIN to SOURCE VOLTAGE (V)
Operating Area
J
A
θ
Unclamped Inductive
DS(on)
JA
= MAX RATED
, TIME IN AVALANCHE (ms)
Q
= 25
g
= 125
, GATE CHARGE (nC)
V
DD
o
C
20
= 16 V
T
o
J
C/W
= 125
1
T
1
J
= 25
o
T
V
C
30
J
DD
o
C
= 25 °C unless otherwise noted
= 20 V
T
J
10
= 100
10
V
DD
40
o
C
= 24 V
10 ms
100 ms
1 s
10 s
DC
1 ms
100200
100
50
4
10000
1000
1000
100
100
100
0.5
80
60
40
20
10
10
Figure 10.
0
1
10
0.1
25
Figure 12.
-3
V
Limited by package
GS
Figure 8.
R
Current vs Case Temperature
θ
f = 1 MHz
V
JC
= 4.5 V
GS
= 3.1
10
= 0 V
V
50
-2
DS
Power Dissipation
Maximum Continuous Drain
to Source Voltage
o
, DRAIN TO SOURCE VOLTAGE (V)
T
C/W
C
Single Pulse Maximum
Capacitance vs Drain
,
t, PULSE WIDTH (sec)
V
CASE TEMPERATURE (
10
GS
-1
= 10 V
1
75
1
100
10
SINGLE PULSE
R
T
A
θ
o
JA
= 25
C )
10
= 125
125
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100
o
C
o
C/W
C
C
C
iss
oss
rss
1000
150
40