FDMS3622S Fairchild Semiconductor, FDMS3622S Datasheet - Page 8

• Manufacturer Part Number: FDMS3622S
• Description: This device includes two specialized N-Channel MOSFETs in a dual PQFN package
• Manufacturer: Fairchild Semiconductor

FDMS3622S Rev.C2
©2011 Fairchild Semiconductor Corporation
Typical Characteristics (Q2 N-Channel)
10
8
6
4
2
0
0.01
100
200
100
0
0.1
10
10
Figure 20. Gate Charge Characteristics
0.001
1
I
1
D
0.01
= 34 A
Figure 22. Unclamped Inductive
THIS AREA IS
LIMITED BY r
SINGLE PULSE
T
R
T
J
A
θ
Figure 24. Forward Bias Safe
15
JA
= MAX RATED
= 25
0.01
= 120
V
o
Switching Capability
C
DS
Q
t
o
0.1
AV
, DRAIN to SOURCE VOLTAGE (V)
g
C/W
Operating Area
30
DS
, GATE CHARGE (nC)
, TIME IN AVALANCHE (ms)
T
(
J
on
V
0.1
= 125
DD
)
= 10 V
45
o
C
V
DD
1
1
T
J
= 15 V
= 25
V
60
DD
o
C
10
= 13 V
T
J
= 100
10
75
100
o
C
10 ms
DC
100
1 ms
100 ms
1s
10s
90
μ
1000
s
100
8
T
J
= 25°C unless otherwise noted
10000
1000
3000
1000
100
100
0.5
10
Figure 23. Maximum Continuous Drain
10
1
180
150
120
0.1
Figure 25. Single Pulse Maximum Power
90
60
30
-4
0
f = 1 MHz
V
25
GS
Figure 21. Capacitance vs Drain
Limited by Package
= 0 V
Current vs Case Temperature
10
R
θ
-3
JC
V
DS
= 1.9
, DRAIN TO SOURCE VOLTAGE (V)
50
10
t, PULSE WIDTH (sec)
to Source Voltage
T
o
-2
C
C/W
V
,
Dissipation
GS
CASE TEMPERATURE (
10
1
= 4.5 V
75
-1
V
1
GS
= 10 V
100
SINGLE PULSE
R
θ
10
JA
= 120
o
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C )
10
100
125
C
C
C
o
C/W
oss
rss
iss
1000
30
150