FDMS3624S Fairchild Semiconductor, FDMS3624S Datasheet - Page 4

• Manufacturer Part Number: FDMS3624S
• Description: This device includes two specialized N-Channel MOSFETs in a dual PQFN package
• Manufacturer: Fairchild Semiconductor

FDMS3624S Rev.C2
©2011 Fairchild Semiconductor Corporation
Typical Characteristics (Q1 N-Channel)
1.8
1.6
1.4
1.2
1.0
0.8
0.6
70
60
50
40
30
20
10
70
60
50
40
30
20
10
0
0
-75
Figure 3. Normalized On Resistance
0.0
0.5
Figure 1.
Figure 5. Transfer Characteristics
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
V
DS
I
V
-50
D
GS
= 17.5 A
= 5 V
vs Junction Temperature
= 10 V
V
V
0.3
1.0
T
V
DS
GS
-25
J
GS
,
,
On Region Characteristics
JUNCTION TEMPERATURE (
= 2.5 V
, GATE TO SOURCE VOLTAGE (V)
DRAIN TO SOURCE VOLTAGE (V)
V
V
GS
T
V
GS
0
J
GS
V
= 150
= 3 V
= 4.5 V
GS
0.6
1.5
= 10 V
25
= 3.5 V
μ
o
C
s
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
50
0.9
2.0
75
T
J
= -55
T
o
100 125 150
J
C )
1.2
2.5
= 25
o
C
o
C
μ
s
3.0
1.5
T
J
4
= 25°C unless otherwise noted
0.001
0.01
0.1
3.0
2.5
2.0
1.5
1.0
0.5
70
10
20
16
12
Figure 2.
Figure 4.
1
8
4
0
0.0
Forward Voltage vs Source Current
vs Drain Current and Gate Voltage
Figure 6.
0
2
V
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
GS
= 0 V
V
3
10
0.2
SD
I
D
Normalized On-Resistance
, BODY DIODE FORWARD VOLTAGE (V)
V
On-Resistance vs Gate to
= 17.5 A
T
GS
Source Voltage
J
Source to Drain Diode
I
4
D
= 150
,
20
,
GATE TO SOURCE VOLTAGE (V)
V
DRAIN CURRENT (A)
0.4
GS
o
V
= 2.5 V
5
C
GS
30
= 3.5 V
μ
0.6
s
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
6
40
V
GS
7
T
0.8
J
= 4.5 V
= -55
50
T
J
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8
V
= 25
o
C
GS
T
T
V
1.0
J
J
GS
= 125
= 25
= 3 V
60
o
C
= 10 V
9
μ
o
s
o
C
C
1.2
70
10