FDD8424H_F085A Fairchild Semiconductor, FDD8424H_F085A Datasheet - Page 3

• Manufacturer Part Number: FDD8424H_F085A
• Manufacturer: Fairchild Semiconductor

©2011 Fairchild Semiconductor Corporation
FDD8424H_F085A Rev.B1
Notes:
1. R
2. Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.
3. Starting T
Electrical Characteristics
Drain-Source Diode Characteristics
V
t
Q
rr
by the user's board design.
SD
rr
θJA
Symbol
is determined with the device mounted on a 1in
J
= 25°C, N-ch: L = 0.3mH, I
Q1
Q2
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Parameter
AS
= 14A, V
DD
2
a. 40°C/W when mounted on
a. 40°C/W when mounted on
= 40V, V
T
Scale 1 : 1 on letter size paper
pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
Scale 1 : 1 on letter size paper
J
a 1 in
a 1 in
= 25°C unless otherwise noted
2
2
GS
pad of 2 oz copper
pad of 2 oz copper
= 10V; P-ch: L = 0.3mH, I
V
V
Q1
I
Q2
I
F
F
GS
GS
= 9.0A, di/dt = 100A/s
= -6.5A, di/dt = 100A/s
= 0V, I
= 0V, I
Test Conditions
3
S
S
= 9.0A
= -6.5A
AS
= -15A, V
DD
(Note 2)
(Note 2)
= -40V, V
GS
θJC
= -10V.
Type
Q1
Q2
Q1
Q2
Q1
Q2
is guaranteed by design while R
b. 96°C/W when mounted on a
b. 96°C/W when mounted on a
minimum pad of 2 oz copper
minimum pad of 2 oz copper
Min
Typ
0.87
0.88
25
29
19
29
Max
θCA
-1.2
www.fairchildsemi.com
1.2
38
44
29
44
is determined
Units
nC
ns
V