FDD8424H_F085A Fairchild Semiconductor, FDD8424H_F085A Datasheet - Page 8

• Manufacturer Part Number: FDD8424H_F085A
• Manufacturer: Fairchild Semiconductor

©2011 Fairchild Semiconductor Corporation
FDD8424H_F085A Rev.B1
Typical Characteristics (Q2 P-Channel)
100
100
0.1
10
10
30
10
0.001
1
1
Figure 20. Gate Charge Characteristics
8
6
4
2
0
1
0
THIS AREA IS
LIMITED BY r
I
D
Figure 22. Unclamped Inductive
= -6.5A
Figure 24
0.01
-V
Switching Capability
4
DS
t
AV
, DRAIN to SOURCE VOLTAGE (V)
ds(on)
Operating Area
T
, TIME IN AVALANCHE(ms)
SINGLE PULSE
T
R
T
Q
J
J
C
θ
. Forward Bias Safe
g
= 125
JC
V
, GATE CHARGE(nC)
= MAX RATED
= 25
DD
0.1
= 3.5
8
o
= -15V
o
C
C
o
C/W
10
T
J
V
= 25
12
1
DD
= -25V
o
C
V
DD
10
16
= -20V
10us
100us
1ms
10ms
DC
100
80
20
T
J
= 25°C unless otherwise noted
9
10000
2000
1000
1000
100
100
25
20
15
10
Figure 23. Maximum Continuous Drain
30
10
10
5
0
0.1
25
-5
Figure 25.
Figure 21. Capacitance vs Drain
R
f = 1MHz
V
Current vs Case Temperature
SINGLE PULSE
R
θ
GS
10
JC
θ
JC
-4
= 0V
= 3.5
V
-V
= 3.5
GS
50
DS
10
Power Dissipation
o
to Source Voltage
T
, DRAIN TO SOURCE VOLTAGE (V)
C/W
= -10V
o
C
-3
C/W
, CASE TEMPERATURE (
Single Pulse Maximum
t, PULSE WIDTH (s)
10
1
-2
75
C
C
C
iss
oss
rss
10
V
GS
FOR TEMPERATURES
ABOVE 25
CURRENT AS FOLLOWS:
V
-1
GS
I = I
= - 4.5V
= - 10V
100
25
10
0
o
C DERATE PEAK
150 T
----------------------- -
10
o
C )
125
10
–
1
125
www.fairchildsemi.com
T
C
C
10
= 25
2
o
C
10
40
150
3