FDMS8020 Fairchild Semiconductor, FDMS8020 Datasheet - Page 3

• Manufacturer Part Number: FDMS8020
• Description: This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers
• Manufacturer: Fairchild Semiconductor

©2011 Fairchild Semiconductor Corporation
FDMS8020 Rev. C
Typical Characteristics
150
120
150
120
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
90
60
30
90
60
30
0
0
Figure 3. Normalized On- Resistance
-75
1.0
Figure 1.
0
Figure 5. Transfer Characteristics
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
V
I
V
DS
D
-50
GS
= 26 A
= 5 V
vs Junction Temperature
V
1.5
V
= 10 V
DS
GS
T
V
1
V
, DRAIN TO SOURCE VOLTAGE (V)
-25
J
GS
,
GS
= 3.5 V
On-Region Characteristics
JUNCTION TEMPERATURE (
V
, GATE TO SOURCE VOLTAGE (V)
GS
T
= 4 V
V
J
2.0
GS
= 150
0
= 4.5 V
= 10 V
2
25
o
C
μ
s
2.5
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
50
T
3
J
T
= 25 °C unless otherwise noted
J
3.0
75
T
= -55
J
V
= 25
GS
o
100 125 150
o
C )
C
= 3 V
o
4
C
3.5
μ
s
4.0
5
3
0.001
0.01
200
100
0.1
10
10
5
4
3
2
1
0
Figure 2.
Figure 4.
8
6
4
2
0
1
0.0
Forward Voltage vs Source Current
0
2
vs Drain Current and Gate Voltage
Figure 6.
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
V
GS
V
T
= 0 V
SD
0.2
J
= 150
, BODY DIODE FORWARD VOLTAGE (V)
30
Normalized On-Resistance
V
On-Resistance vs Gate to
GS
V
I
Source Voltage
D
GS
4
Source to Drain Diode
,
,
o
GATE TO SOURCE VOLTAGE (V)
I
DRAIN CURRENT (A)
= 3 V
D
C
0.4
= 26 A
T
J
60
= 125
μ
s
0.6
6
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
o
C
T
V
J
90
GS
= 25
0.8
V
= 4.5 V
T
GS
o
J
T
C
= -55
J
= 3.5 V
= 25
8
120
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V
o
1.0
o
C
GS
V
C
GS
= 10 V
= 4 V
μ
s
1.2
150
10