FDMB2307NZ Fairchild Semiconductor, FDMB2307NZ Datasheet - Page 2

• Manufacturer Part Number: FDMB2307NZ
• Description: This device is designed specifically as a single package solution for Li-Ion battery pack protection circuit and other ultra-portable applications
• Manufacturer: Fairchild Semiconductor

©2011 Fairchild Semiconductor Corporation
FDMB2307NZ Rev.C5
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Source1- Source2 Diode Characteristics
NOTES:
1. R
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse ocurrence only. No continuous rating is implied.
I
I
V
r
g
C
C
C
t
t
t
t
Q
Q
Q
Q
I
V
S1S2
GSS
d(on)
r
d(off)
f
fss
S1S2(on)
FS
the user's board design.
GS(th)
fss
iss
oss
rss
g
g
gs
gd
Symbol
θJA
is determined with the device mounted on a 1 in
Zero Gate Voltage Source1 to Source2
Current
Gate to Source Leakage Current
Gate to Source Threshold Voltage
Static Source1 to Source2 On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
Maximum Continuous Source1-Source2 Diode Forward Current
Source1 to Source2 Diode Forward Voltage
Parameter
a. 57 °C/W when mounted on
a 1 in
2
T
2
pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
J
pad of 2 oz copper
= 25°C unless otherwise noted
V
V
V
V
V
V
V
V
T
V
V
V
V
V
V
f = 1 MHz
V
I
S1S2
GS
J
GS
GS
GS
GS
GS
GS
S1S2
fss
S1S2
GS
GS
GS
S1S2
G1S 1
= 125 °C
= 8 A
= 12 V, V
= V
= 4.5 V, I
= 4.2 V, I
= 3.1 V, I
= 2.5 V, I
= 4.5 V, I
= 4.5 V, R
= 0 V to 5 V
= 0 V to 4.5 V
= 16 V, V
= 5 V, I
= 10 V, I
2
= 0 V, V
= 10 V, V
S1S2
Test Conditions
, I
S1S2
S1S2
S1S2
S1S2
S1S2
S1S2
S1S2
S1S2
S1S2
GEN
G2S2
GS
GS
= 0 V
= 8 A
= 7.4 A
= 7 A
= 6.7 A
= 8 A,
= 8 A
= 0 V
= 6 Ω
V
I
= 250 μA
= 4.5 V,
= 8 A,
= 0 V,
S1S2
S1S2
= 8 A
= 10 V,
(Note 2)
θJC
b. 161 °C/W when mounted on
is guaranteed by design while R
a minimum pad of 2 oz copper
10.5
11.5
Min
0.6
12
11
11
1760
13.5
9.5
2.8
5.3
0.8
Typ
229
211
12
19
32
20
18
14
16
18
20
41
1
2640
θCA
Max
16.5
1.2
345
320
www.fairchildsemi.com
1.5
22
34
51
17
28
25
18
21
24
29
10
8
1
is determined by
Units
mΩ
pF
pF
pF
nC
nC
nC
nC
μA
μA
ns
ns
ns
ns
A
V
V
S