FDMS8622 Fairchild Semiconductor, FDMS8622 Datasheet
FDMS8622
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FDMS8622 Summary of contents
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... Thermal Resistance, Junction to Case θJC R Thermal Resistance, Junction to Ambient θJA Package Marking and Ordering Information Device Marking Device FDMS8622 FDMS8622 ©2011 Fairchild Semiconductor Corporation FDMS8622 Rev.C ® MOSFET General Description = 4 This Semiconductor‘s advanced Power Trench = 3 been optimized for r DS(on) ruggedness ...
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... Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%. ° 3.Starting N-ch 0.1 mH FDMS8622 Rev °C unless otherwise noted J Test Conditions = 250 μ 250 μA, referenced to 25 °C ...
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... DUTY CYCLE = 0.5% MAX 150 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics FDMS8622 Rev °C unless otherwise noted μ 2.0 2.5 3.0 3.5 250 200 150 100 50 75 100 125 150 ...
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... SINGLE PULSE 0 MAX RATED 125 C/W θ 0.01 0.01 0 DRAIN to SOURCE VOLTAGE (V) DS Figure 11. Forward Bias Safe Operating Area FDMS8622 Rev °C unless otherwise noted J 500 = 25 V 100 100 ...
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... Typical Characteristics 2 DUTY CYCLE-DESCENDING ORDER 0.5 0.2 0.1 0.05 0.1 0.02 0.01 0.01 0.001 - Figure 13. FDMS8622 Rev °C unless otherwise noted J SINGLE PULSE 125 C/W θ RECTANGULAR PULSE DURATION (s) Junction-to-Ambient Transient Thermal Response Curve NOTES: DUTY FACTOR ...
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... Dimensional Outline and Pad Layout FDMS8622 Rev.C 6 www.fairchildsemi.com ...
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... PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDMS8622 Rev.C ® * PDP SPM™ Power-SPM™ ® PowerTrench PowerXS™ SM Programmable Active Droop™ ® QFET QS™ ...