FDQ7236AS Fairchild Semiconductor, FDQ7236AS Datasheet

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FDQ7236AS

Manufacturer Part Number
FDQ7236AS
Description
The FDQ7236AS is designed to replace two single SO- 8 MOSFETs in DC to DC power supplies
Manufacturer
Fairchild Semiconductor
Datasheet
Absolute Maximum Ratings
V
V
I
P
T
Thermal Characteristics
R
Package Marking and Ordering Information
Symbol
D
FDQ7236AS
Dual Notebook Power Supply N-Channel PowerTrench
General Description
The FDQ7236AS is designed to replace two single SO-
8 MOSFETs in DC to DC power supplies. The high-side
switch (Q1) is designed with specific emphasis on
reducing switching losses while the low-side switch
(Q2) is optimized to reduce conduction losses using
Fairchild’s SyncFET
includes a patented combination of a MOSFET
monolithically integrated with a Schottky diode.
©2011 Fairchild Semiconductor Corporation
J
DSS
GSS
D
θJA
, T
Device Marking
SO-14
STG
FDQ7236AS
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation for Single Operation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction-to-Ambient
pin 1
TM
technology. The FDQ7236AS
Vin
- Continuous
- Pulsed
FDQ7236AS
G1
Parameter
Device
G2
S2
T
A
= 25°C unless otherwise noted
S2
S2
(Note 1a & 1b)
(Note 1c & 1d)
(Note 1c & 1d)
(Note 1a & 1b)
(Note 1a)
Reel Size
13”
Features
Q2: 14 A, 30V. R
Q1: 11 A, 30V. R
Q2
±20
2.4
1.3
30
14
50
52
94
Tape width
−55 to +150
16mm
®
R
R
in SO-14 Package
DS(on)
DS(on)
DS(on)
DS(on)
= 8.7 mΩ @ V
= 10.5 mΩ @ V
= 13.2 mΩ @ V
= 16 mΩ @ V
Q1
±20
118
1.8
1.1
30
11
50
68
January 2011
FDQ7236AS Rev C
GS
2500 units
GS
Quantity
GS
GS
= 4.5V
= 10V
= 4.5V
= 10V
Units
°C/W
°C
W
V
V
A

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FDQ7236AS Summary of contents

Page 1

... FDQ7236AS Dual Notebook Power Supply N-Channel PowerTrench General Description The FDQ7236AS is designed to replace two single SO- 8 MOSFETs power supplies. The high-side switch (Q1) is designed with specific emphasis on reducing switching losses while the low-side switch (Q2) is optimized to reduce conduction losses using TM Fairchild’ ...

Page 2

... 1.0 MHz 15mV 1.0 MHz mV/°C 24 µA 500 1 5.6 mA µA 40 ±100 1.7 3 −3 mV/°C −4 7.2 8.7 mΩ 8.7 10.5 10 12 1530 pF 920 440 pF 190 160 pF 120 Ω 1.9 1.9 FDQ7236AS Rev C ...

Page 3

... 4 2 3 2.1 Q2 0.5 0.7 V 0.4 Q1 0.7 1 118°C/W when mounted on a minimum pad copper (Q1). d) 94°C/W when mounted on a minimum pad copper (Q2). FDQ7236AS Rev C ...

Page 4

... Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. = 3.0V 3.5V 4.0V 4.5V 6. DRAIN CURRENT ( 125 GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125 -55 C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD FDQ7236AS Rev C 10. ...

Page 5

... DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R = 94°C/W θ 25°C A 0.01 0 100 t , TIME (sec) 1 Power Dissipation. R ( θJA θ 94°C/W θJA P(pk (t) θ Duty Cycle 100 1000 FDQ7236AS Rev 1000 ...

Page 6

... Schottky diode in parallel with a MOSFET. Figure 12 shows the reverse recovery characteristic of the FDQ7236AS Q2. TIME : 12nS/div Figure 12. FDQ7236AS SyncFET body diode reverse recovery characteristic. For comparison purposes, Figure 13 shows the reverse recovery characteristics of the body diode of an equivalent size MOSFET produced without SyncFET(FDS6670A) ...

Page 7

... Figure 20. Body Diode Forward Voltage Variation with Source Current and Temperature. 4.0V 4.5V 6.0V 10. DRAIN CURRENT ( 5. 125 GATE TO SOURCE VOLTAGE ( 125 -55 C 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD FDQ7236AS Rev 1.4 ...

Page 8

... V , DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R = 118°C/W θ 25° 100 t , TIME (sec) 1 Power Dissipation. R ( θJA θ 118 °C/W θJA P(pk (t) θ Duty Cycle 100 1000 FDQ7236AS Rev C 30 1000 ...

Page 9

... TinyBoost™ TinyBuck™ TinyCalc™ ® TinyLogic TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ ® TranSiC TriFault Detect™ ® TRUECURRENT * μSerDes™ ® UHC Ultra FRFET™ UniFET™ VCX™ VisualMax™ XS™ Definition Rev. I54 FDQ7236AS Rev C ...

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