FDP085N10A_F102 Fairchild Semiconductor, FDP085N10A_F102 Datasheet - Page 3

• Manufacturer Part Number: FDP085N10A_F102
• Manufacturer: Fairchild Semiconductor

FDP085N10A_F102 Rev. A
Typical Performance Characteristics
10000
1000
500
100
Figure 5. Capacitance Characteristics
Figure 3. On-Resistance Variation vs.
100
10
18
16
12
Figure 1. On-Region Characteristics
10
5
8
4
0.1
0.1
0
V
*Note: T
*Note:
C iss = C gs + C gd
C oss = C ds + C gd
C rss = C gd
GS
1. V
2. f = 1MHz
= 15.0V
10.0V
GS
8.0V
6.5V
6.0V
5.5V
5.0V
V
V
Drain Current and Gate Voltage
DS
= 0V
DS
C
100
, Drain-Source Voltage[V]
= 25
, Drain-Source Voltage [V]
I
D
, Drain Current [A]
o
1
(
C
C ds = shorted
200
V
V
*Notes:
GS
GS
1. 250
2. T
1
)
= 10V
= 20V
C
10
= 25
μ
C
C
C
s Pulse Test
300
oss
rss
iss
o
C
400
100
5
3
Figure 2. Transfer Characteristics
Figure 4. Body Diode Forward Voltage
Figure 6. Gate Charge Characteristics
300
100
10
500
100
1
10
10
2
1
8
6
4
2
0
0.3
0
Variation vs. Source Current
and Temperature
V
3
SD
175
V
, Body Diode Forward Voltage [V]
7
GS
0.6
Q
o
, Gate-Source Voltage[V]
C
g
, Total Gate Charge [nC]
-55
4
175
14
V
V
V
25
o
C
DS
DS
DS
o
o
C
C
0.9
= 20V
= 50V
= 80V
25
*Notes:
o
1. V
2. 250
C
5
21
*Notes:
1. V
2. 250
DS
μ
*Note: I
= 10V
s Pulse Test
GS
μ
1.2
= 0V
s Pulse Test
6
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28
D
= 96A
7
1.5
35