2N7002KW Fairchild Semiconductor, 2N7002KW Datasheet

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2N7002KW

Manufacturer Part Number
2N7002KW
Description
Manufacturer
Fairchild Semiconductor
Datasheet

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2N7002KW Rev. A0
© 2011 Fairchild Semiconductor Corporation
2N7002KW
N-Channel Enhancement Mode Field Effect Transistor
Features
• Low On-Resistance
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Ultra-Small Surface Mount Package
• Pb Free/RoHS Compliant
• ESD HBM=1000V as per JESD22 A114 and ESD CDM=1500V as per JESD22 C101
Absolute Maximum Ratings *
* These ratings are limiting values above which the serviceability of any semiconductor device may by impaired.
Thermal Characteristics
* Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch. Minimum land pad size
Symbol
Symbol
V
V
T
R
P
DSS
GSS
T
STG
I
θJA
D
D
J
Drain-Source Voltage
Gate-Source Voltage
Maximum Drain Current
Operating Junction Temperature Range
Storage Temperature Range
Total Device Dissipation
Derating above T
Thermal Resistance, Junction to Ambient *
A
= 25°C
Parameter
Parameter
D
Marking : 7KW
T
G
A
= 25°C unless otherwise noted
SOT-323
S
- Continuous
- Pulsed
T
J
= 100°C
1
-55 to +150
-55 to +150
Value
Value
±20
310
195
300
410
1.2
2.4
60
mW/°C
Units
Units
www.fairchildsemi.com
°C/W
mW
mA
mA
°C
°C
May 2011
V
V
A

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2N7002KW Summary of contents

Page 1

... Symbol P Total Device Dissipation D Derating above Thermal Resistance, Junction to Ambient * θJA * Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch. Minimum land pad size © 2011 Fairchild Semiconductor Corporation 2N7002KW Rev SOT-323 G Marking : 7KW T = 25°C unless otherwise noted A Parameter - Continuous T = 100° ...

Page 2

... Maximum Continuous Drain-Source Diode Forward Current S I Maximum Pulsed Drain-Source Diode Forward Current SM V Drain-Source Diode Forward SD Voltage Note1 : 1. Pulse Test: Pulse Width < 300μs, Duty Cycle < 2.0%. © 2011 Fairchild Semiconductor Corporation 2N7002KW Rev 25°C unless otherwise noted A Test Condition = 0V, I =10μ 60V, V ...

Page 3

... GS 4.5V 2.5 5V 2.0 6V 1.5 1.0 0.5 0.0 0.5 1 Drain-Source Current(A) D Figure 5. Transfer Characteristics 3 10V DS 3 25( A 2.5 2.0 1.5 1.0 0.5 0 Gate-Source Voltage (V) GS © 2011 Fairchild Semiconductor Corporation 2N7002KW Rev. A0 Figure 2. On-Resistance Variation with 2 10V GS 2.0 9V 1.8 6V 1.6 5V 1.4 1.2 4V 1.0 0 0.6 GS 0.4 2.5 3.0 3.5 4.0 4.5 -50 Figure 4. On-Resistance Variation with 10V ...

Page 4

... Figure 11. Maximum Safe Operating Area Limit DS(on Drain-Source Voltage [V] DS © 2011 Fairchild Semiconductor Corporation 2N7002KW Rev. A0 (Continued) Figure 8. Body Diode Forward Voltage Variation 10000 V GS 1000 100 10 1 0.1 75 100 125 0 Figure 10. Gate Charge Characteristics ...

Page 5

... Physical Dimensions 1.25±0.10 1.00±0.10 © 2011 Fairchild Semiconductor Corporation 2N7002KW Rev. A0 SOT-323 2.00±0.20 2.10±0.10 0.95±0.15 0.05 0.275±0.100 3° +0.04 0.135 –0.01 0.10 Min 5 3° 0.90 ±0.10 +0.05 –0.02 1.30±0.10 Dimensions in Millimeters www.fairchildsemi.com ...

Page 6

... TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended exhaustive list of all such trademarks. AccuPower F-PFS FRFET Auto-SPM Global Power Resource AX-CAP * Green FPS Build it Now Green FPS ...

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