2N7002KW Fairchild Semiconductor, 2N7002KW Datasheet - Page 2

• Manufacturer Part Number: 2N7002KW
• Manufacturer: Fairchild Semiconductor

2N7002KW Rev. A0
© 2011 Fairchild Semiconductor Corporation
Electrical Characteristics
Note1 : 1. Pulse Test: Pulse Width < 300μs, Duty Cycle < 2.0%.
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics and Maximum Ratings
Symbol
R
V
BV
V
t
I
t
D(OFF)
DS(ON)
DS(ON)
D(ON)
D(ON)
I
I
C
C
V
GS(th)
C
g
DSS
GSS
I
SM
I
FS
oss
rss
SD
DSS
iss
S
Drain-Source Breakdown Voltage V
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Drain-Source On-Voltage
On-State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-Off Delay Time
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
Drain-Source Diode Forward
Voltage
Parameter
(Note1)
T
A
= 25°C unless otherwise noted
V
V
V
V
V
V
V
V
V
V
V
V
V
V
I
V
D
GS
DS
DS
GS
DS
GS
GS
GS
GS
GS
GS
GS
DS
DS
DD
GS
= 200mA, R
= 60V, V
= 60V, V
= 0V, I
= ±20V, V
= V
= 10V, I
= 2V, I
= 25V, V
= 10V, I
= 5V, I
= 5V, I
= 10V, I
= 5V, I
= 10V, V
= 30V, R
= 0V, I
GS
Test Condition
, I
D
D
D
D
D
S
2
D
D
D
D
=10μA
= 0.2A
= 115mA
GS
GS
= 50mA
= 50mA, T
= 50mA
DS
GS
L
= 500mA, T
DS
= 500mA
= 500mA
= 250μA
GEN
= 150Ω, V
= 0V, f = 1.0MHz
= 0V
= 0V, T
= 2V
= 0V
= 25Ω
J
J
= 125°C
= 100°C
GS
J
= 100°C
= 10V,
Min.
500
1.1
60
80
Typ.
Max. Units
3.75
±10
115
1.0
0.5
2.1
1.6
2.4
1.5
0.8
1.1
50
25
20
60
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2
3
5
mA
mA
mS
mA
μA
μA
pF
pF
pF
ns
ns
Ω
Ω
Ω
Ω
V
V
V
V
A
V